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Crystal plasticity finite element study on the formation of Goss-oriented deformation inhomogeneous regions in electrical steels

For electrical steels, the volume fraction and distribution of the residual Goss-oriented regions after cold rolling is critical in controlling the Goss texture during subsequent annealing treatment. The heterogeneous distribution of Goss-oriented regions and its evolution is not quantitatively unde...

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Published in:International journal of material forming 2023-05, Vol.16 (3), Article 31
Main Authors: Wang, Huanzhu, Yang, Ping, Xie, Qingge, Jiang, Weining
Format: Article
Language:English
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Summary:For electrical steels, the volume fraction and distribution of the residual Goss-oriented regions after cold rolling is critical in controlling the Goss texture during subsequent annealing treatment. The heterogeneous distribution of Goss-oriented regions and its evolution is not quantitatively understood and many simulation methods are lack of microstructure information. A full field crystal plasticity finite element method was employed to estimate the microstructure evolution during rolling for a Goss-oriented grain and two setups of bicrystals composing of ( 111 ) [ 1 ¯ 1 ¯ 2 ] and (110)[001] orientations respectively. The simulation results indicate that the possibility of Goss-oriented grains remaining within microbands depended on the intensity of the two symmetrical ( 111 ) [ 1 ¯ 1 ¯ 2 ] and ( 111 ) [ 1 2 ¯ 1 ] orientations, and the higher the ( 111 ) [ 1 ¯ 1 ¯ 2 ] -oriented intensity was, the more residual Goss-oriented regions as microbands were. The ( 111 ) [ 1 ¯ 1 ¯ 2 ] component intensity was lower and its volume fraction was less under the additional displacement gradient component L 13 , so that the Goss orientation remained only on the upper and lower surfaces of the rolled sheet in the Goss-oriented quasi-single crystal model. There are the residual Goss-oriented regions as microbands in both groups of bicrystals. When the Goss-oriented grain in the upper part, the intensity of the ( 111 ) [ 1 ¯ 1 ¯ 2 ] component is higher, and the microbands distribution characteristics of residual Goss-oriented regions are more obvious.
ISSN:1960-6206
1960-6214
DOI:10.1007/s12289-023-01754-3