Numerical investigation of flow behaviors in chemical mechanical polishing processes

Chemical mechanical polishing (CMP) is an important technology for planarization in the semiconductor industry. The replacement speed of the fresh and spent slurry is an important index of improving production efficiency. In the present study, the volume of fluid (VOF) model is adopted to simulate t...

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Bibliographic Details
Main Authors: Lin, Cheng-Yung, Liao, Chuan-Chieh
Format: Conference Proceeding
Language:English
Subjects:
Chemical-mechanical polishing
Grooves
Slurries
Surface layers
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Summary:Chemical mechanical polishing (CMP) is an important technology for planarization in the semiconductor industry. The replacement speed of the fresh and spent slurry is an important index of improving production efficiency. In the present study, the volume of fluid (VOF) model is adopted to simulate the fresh and spent slurry flows within the gap between the polishing pad and the wafer. We investigate effects of the rotational speed, distance between the polishing pad center and the wafer center, and the surface texture of the polishing pad on the replacement speed of the fresh and spent slurry. The replacement speed is quantified by the mean residence time (MRT). The result shows that the increase of the rotational speed and distance of centers effectively reduce the MRT value. However, the residence range of the spent slurry becomes larger with the increase of rotational speed of wafer when the rotational speed of polishing pad is constant. Finally, the influence of concentric groove geometry on the polishing pad is considered, where the replacement speed and residence range of the spent slurry are studied.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0112083