Comparison of parameter variation of InAs quantum dots embedded in GaAs/Al0.30Ga0.70As structures with different capping/buffer quantum wells at annealing

• Published in: Journal of materials science. Materials in electronics 2023-05, Vol.34 (14), p.1129, Article 1129
• Main Authors: Tamayo, R. Cisneros, Torchynska, T. V., Polupan, G., Stintz, A.
• Format: Article
• Language: English
• Subjects: Annealing; Argon; Buffers; Capping; Characterization and Evaluation of Materials; Chemistry and Materials Science; Composition; Emission analysis; Energy; Gallium arsenide; Indium arsenides; Interfaces; Materials Science; Mathematical models; Molecular beam epitaxy; Optical and Electronic Materials; Quantum dots; Quantum wells; Software; Temperature; X-ray diffraction; X-rays
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-023-10374-1

The emission variation with annealing in GaAs/Al 0.30 Ga 0.70 As structures with quantum dots of InAs (QDs) located in different capping/buffer wells (QWs) is investigated. Two types of QD structures are compared: (i) Al 0.10 Ga 0.75 In 0.15 As capping and Ga 0.85 In 0.15 As buffer (#1) and (ii) Al 0.40 Ga 0.45 In 0.15 As capping and Ga 0.75 In 0.25 As buffer (#2) layers. QD structures were annealed at 640 °C or 710 °C for 2 hours in an argon atmosphere for estimation of their application temperature ranges. To reveal the variation of the QD and capping/buffer QW compositions, the investigations of QD emission and X-ray diffraction of high-resolution (HR-XRD) have been used. Furthermore, HR-XRD scans were modeled by numerical simulation with X’Pert Epitaxy software. The variation of the QD emission peaks against temperatures in the range of 10-400 K was also studied, allowing QD compositions to be monitored. The advantages of the studied QD structures have been compared and discussed in detail.