A Charge Sensitive Amplifier in a 28 nm CMOS Technology for Pixel Detectors at Future Particle Colliders

This paper is concerned with the design of a Charge Sensitive Amplifier (CSA) in a 28 nm CMOS technology. The CSA discussed in this work is conceived for High Energy Physics (HEP) experiments at next-generation colliders, where pixel detectors will be read out by specific front-end chips, typically...

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Bibliographic Details
Published in:Electronics (Basel) 2023-04, Vol.12 (9), p.2054
Main Authors: Gaioni, Luigi, Galliani, Andrea, Traversi, Gianluca
Format: Article
Language:English
Subjects:
Amplifiers
Amplifiers (Electronics)
CMOS
Complementary metal oxide semiconductors
Design
Design and construction
Detectors
Experiments
Feedback
Leakage current
Microprocessors
Particle accelerators
Pixels
Power consumption
Power management
Radiation
Sensors
Simulation
Transistors
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Summary:This paper is concerned with the design of a Charge Sensitive Amplifier (CSA) in a 28 nm CMOS technology. The CSA discussed in this work is conceived for High Energy Physics (HEP) experiments at next-generation colliders, where pixel detectors will be read out by specific front-end chips, typically including a CSA exploited for charge-to-voltage conversion of the signal delivered by the sensor. The main analog performance parameters of the CSA, also referred to as the pre-amplifier, are assessed here by means of specific Spectre simulations, which are meant to evaluate the behavior of the analog processor in terms of noise, linearity and capability to compensate for very large detector leakage currents. Noise simulations revealed an equivalent noise charge close to 75 electrons rms for typical operating conditions. Up to 50 nA sensor leakage current can be compensated for thanks to the CSA Keummenacher feedback network. The total current consumption of the CSA is close to 2.2 µA, which, together with a power supply of 0.9 V, translates to a power consumption of 2.0 µW.
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics12092054