Physics Based SPICE Modeling of Dynamic On-state Resistance of p-GaN HEMTs

This letter introduces a new physics based SPICE modeling method for the dynamic on-state resistance ( R on,dy ) of gallium nitride based p-type gate power high electron mobility transistors (p-GaN HEMTs). To describe the continuous variations of R on,dy , a time-resolved electron mobility variation...

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Bibliographic Details
Published in:IEEE transactions on power electronics 2023-07, Vol.38 (7), p.1-4
Main Authors: Li, Sheng, Ma, Yanfeng, Zhang, Chi, Lu, Weihao, Liu, Mengli, Li, Mingfei, Yang, Lanlan, Liu, Siyang, Wei, Jiaxing, Zhang, Long, Sun, Weifeng, Sun, Jiaxin
Format: Article
Language:English
Subjects:
dynamic Ron
Gallium nitrides
HEMTs
High electron mobility transistors
Integrated circuit modeling
Mathematical models
Modelling
MODFETs
p-GaN HEMT
Parameters
Physical properties
Semiconductor devices
SPICE
SPICE model
Stress
Temperature measurement
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Summary:This letter introduces a new physics based SPICE modeling method for the dynamic on-state resistance ( R on,dy ) of gallium nitride based p-type gate power high electron mobility transistors (p-GaN HEMTs). To describe the continuous variations of R on,dy , a time-resolved electron mobility variation (Δ μ eff ) model is proposed. Physical parameters including activation energy and voltage acceleration factor of traps in p-GaN HEMTs are extracted as the model parameters. Then, to achieve the goal of simulating Ron,dy, the proposed Δμeff model is incorporated into the surface potential based advanced SPICE model for GaN HEMT (ASM-HEMT). Simulative results prove the proposed models can predict the R on,dy induced power loss.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2023.3262938