Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3Sn

Topological semimetal materials have become a research hotspot due to their intrinsic strong spin-orbit coupling which leads to large charge-to-spin conversion efficiency and novel transport behaviors. In this work, we have observed a bilinear magnetoelectric resistance (BMER) of up to 0.1 nm2A-1Oe-...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2023-05
Main Authors: Fan, Yihong, Cresswell, Zach, Yang, Yifei, Jiang, Wei, Yang, Lv, Peterson, Thomas, Zhang, Delin, Liu, Jinming, Low, Tony, Wang, Jian-ping
Format: Article
Language:English
Subjects:
Charge efficiency
Intermetallic compounds
Memory devices
Polycrystals
Room temperature
Spin-orbit interactions
Topology
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page
container_issue
container_start_page
container_title arXiv.org
container_volume
creator Fan, Yihong
Cresswell, Zach
Yang, Yifei
Jiang, Wei
Yang, Lv
Peterson, Thomas
Zhang, Delin
Liu, Jinming
Low, Tony
Wang, Jian-ping
description Topological semimetal materials have become a research hotspot due to their intrinsic strong spin-orbit coupling which leads to large charge-to-spin conversion efficiency and novel transport behaviors. In this work, we have observed a bilinear magnetoelectric resistance (BMER) of up to 0.1 nm2A-1Oe-1 in a singlelayer of sputtered semimetal Pt3Sn at room temperature. Different from previous observations, the value of BMER in sputtered Pt3Sn does not change out-of-plane due to the polycrystalline nature of Pt3Sn. The observation of BMER provides strong evidence of the existence of spin-momentum locking in the sputtered polycrystalline Pt3Sn. By adding an adjacent CoFeB magnetic layer, the BMER value of this bilayer system is doubled compared to the single Pt3Sn layer. This work broadens the material system in BMER study, which paves the way for the characterization of topological states and applications for spin memory and logic devices.
format article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_2815837093</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2815837093</sourcerecordid><originalsourceid>FETCH-proquest_journals_28158370933</originalsourceid><addsrcrecordid>eNqNi0FqAkEQRZtAQDHeoSBrYex24rgOCdkpJHtpx69p6a6aVNdklcNHIQfI6j9479-5qQ9huehW3k_cvNZL0zT-ae3bNkzdz_ZQod_RkjBFPhL4M3KPAjaSE6lIIUMZoNFGBR1SToyoVOKZYYKM3jT1pKip2u1LiakOoxkURzIZJMs59TFTRUkFdqWdhXd-cPenmCvmfztzj68vH89vi0Hla0S1_UVG5ava-27ZdmHdbEL4X_UL1_pQ_A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2815837093</pqid></control><display><type>article</type><title>Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3Sn</title><source>Publicly Available Content (ProQuest)</source><creator>Fan, Yihong ; Cresswell, Zach ; Yang, Yifei ; Jiang, Wei ; Yang, Lv ; Peterson, Thomas ; Zhang, Delin ; Liu, Jinming ; Low, Tony ; Wang, Jian-ping</creator><creatorcontrib>Fan, Yihong ; Cresswell, Zach ; Yang, Yifei ; Jiang, Wei ; Yang, Lv ; Peterson, Thomas ; Zhang, Delin ; Liu, Jinming ; Low, Tony ; Wang, Jian-ping</creatorcontrib><description>Topological semimetal materials have become a research hotspot due to their intrinsic strong spin-orbit coupling which leads to large charge-to-spin conversion efficiency and novel transport behaviors. In this work, we have observed a bilinear magnetoelectric resistance (BMER) of up to 0.1 nm2A-1Oe-1 in a singlelayer of sputtered semimetal Pt3Sn at room temperature. Different from previous observations, the value of BMER in sputtered Pt3Sn does not change out-of-plane due to the polycrystalline nature of Pt3Sn. The observation of BMER provides strong evidence of the existence of spin-momentum locking in the sputtered polycrystalline Pt3Sn. By adding an adjacent CoFeB magnetic layer, the BMER value of this bilayer system is doubled compared to the single Pt3Sn layer. This work broadens the material system in BMER study, which paves the way for the characterization of topological states and applications for spin memory and logic devices.</description><identifier>EISSN: 2331-8422</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Charge efficiency ; Intermetallic compounds ; Memory devices ; Polycrystals ; Room temperature ; Spin-orbit interactions ; Topology</subject><ispartof>arXiv.org, 2023-05</ispartof><rights>2023. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.proquest.com/docview/2815837093?pq-origsite=primo$$EHTML$$P50$$Gproquest$$Hfree_for_read</linktohtml><link.rule.ids>780,784,25751,37010,44588</link.rule.ids></links><search><creatorcontrib>Fan, Yihong</creatorcontrib><creatorcontrib>Cresswell, Zach</creatorcontrib><creatorcontrib>Yang, Yifei</creatorcontrib><creatorcontrib>Jiang, Wei</creatorcontrib><creatorcontrib>Yang, Lv</creatorcontrib><creatorcontrib>Peterson, Thomas</creatorcontrib><creatorcontrib>Zhang, Delin</creatorcontrib><creatorcontrib>Liu, Jinming</creatorcontrib><creatorcontrib>Low, Tony</creatorcontrib><creatorcontrib>Wang, Jian-ping</creatorcontrib><title>Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3Sn</title><title>arXiv.org</title><description>Topological semimetal materials have become a research hotspot due to their intrinsic strong spin-orbit coupling which leads to large charge-to-spin conversion efficiency and novel transport behaviors. In this work, we have observed a bilinear magnetoelectric resistance (BMER) of up to 0.1 nm2A-1Oe-1 in a singlelayer of sputtered semimetal Pt3Sn at room temperature. Different from previous observations, the value of BMER in sputtered Pt3Sn does not change out-of-plane due to the polycrystalline nature of Pt3Sn. The observation of BMER provides strong evidence of the existence of spin-momentum locking in the sputtered polycrystalline Pt3Sn. By adding an adjacent CoFeB magnetic layer, the BMER value of this bilayer system is doubled compared to the single Pt3Sn layer. This work broadens the material system in BMER study, which paves the way for the characterization of topological states and applications for spin memory and logic devices.</description><subject>Charge efficiency</subject><subject>Intermetallic compounds</subject><subject>Memory devices</subject><subject>Polycrystals</subject><subject>Room temperature</subject><subject>Spin-orbit interactions</subject><subject>Topology</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><recordid>eNqNi0FqAkEQRZtAQDHeoSBrYex24rgOCdkpJHtpx69p6a6aVNdklcNHIQfI6j9479-5qQ9huehW3k_cvNZL0zT-ae3bNkzdz_ZQod_RkjBFPhL4M3KPAjaSE6lIIUMZoNFGBR1SToyoVOKZYYKM3jT1pKip2u1LiakOoxkURzIZJMs59TFTRUkFdqWdhXd-cPenmCvmfztzj68vH89vi0Hla0S1_UVG5ava-27ZdmHdbEL4X_UL1_pQ_A</recordid><startdate>20230524</startdate><enddate>20230524</enddate><creator>Fan, Yihong</creator><creator>Cresswell, Zach</creator><creator>Yang, Yifei</creator><creator>Jiang, Wei</creator><creator>Yang, Lv</creator><creator>Peterson, Thomas</creator><creator>Zhang, Delin</creator><creator>Liu, Jinming</creator><creator>Low, Tony</creator><creator>Wang, Jian-ping</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope></search><sort><creationdate>20230524</creationdate><title>Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3Sn</title><author>Fan, Yihong ; Cresswell, Zach ; Yang, Yifei ; Jiang, Wei ; Yang, Lv ; Peterson, Thomas ; Zhang, Delin ; Liu, Jinming ; Low, Tony ; Wang, Jian-ping</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_28158370933</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Charge efficiency</topic><topic>Intermetallic compounds</topic><topic>Memory devices</topic><topic>Polycrystals</topic><topic>Room temperature</topic><topic>Spin-orbit interactions</topic><topic>Topology</topic><toplevel>online_resources</toplevel><creatorcontrib>Fan, Yihong</creatorcontrib><creatorcontrib>Cresswell, Zach</creatorcontrib><creatorcontrib>Yang, Yifei</creatorcontrib><creatorcontrib>Jiang, Wei</creatorcontrib><creatorcontrib>Yang, Lv</creatorcontrib><creatorcontrib>Peterson, Thomas</creatorcontrib><creatorcontrib>Zhang, Delin</creatorcontrib><creatorcontrib>Liu, Jinming</creatorcontrib><creatorcontrib>Low, Tony</creatorcontrib><creatorcontrib>Wang, Jian-ping</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science &amp; Engineering Collection</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>ProQuest Central Essentials</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content (ProQuest)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fan, Yihong</au><au>Cresswell, Zach</au><au>Yang, Yifei</au><au>Jiang, Wei</au><au>Yang, Lv</au><au>Peterson, Thomas</au><au>Zhang, Delin</au><au>Liu, Jinming</au><au>Low, Tony</au><au>Wang, Jian-ping</au><format>book</format><genre>document</genre><ristype>GEN</ristype><atitle>Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3Sn</atitle><jtitle>arXiv.org</jtitle><date>2023-05-24</date><risdate>2023</risdate><eissn>2331-8422</eissn><abstract>Topological semimetal materials have become a research hotspot due to their intrinsic strong spin-orbit coupling which leads to large charge-to-spin conversion efficiency and novel transport behaviors. In this work, we have observed a bilinear magnetoelectric resistance (BMER) of up to 0.1 nm2A-1Oe-1 in a singlelayer of sputtered semimetal Pt3Sn at room temperature. Different from previous observations, the value of BMER in sputtered Pt3Sn does not change out-of-plane due to the polycrystalline nature of Pt3Sn. The observation of BMER provides strong evidence of the existence of spin-momentum locking in the sputtered polycrystalline Pt3Sn. By adding an adjacent CoFeB magnetic layer, the BMER value of this bilayer system is doubled compared to the single Pt3Sn layer. This work broadens the material system in BMER study, which paves the way for the characterization of topological states and applications for spin memory and logic devices.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier EISSN: 2331-8422
ispartof arXiv.org, 2023-05
issn 2331-8422
language eng
recordid cdi_proquest_journals_2815837093
source Publicly Available Content (ProQuest)
subjects Charge efficiency
Intermetallic compounds
Memory devices
Polycrystals
Room temperature
Spin-orbit interactions
Topology
title Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3Sn
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T13%3A23%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=document&rft.atitle=Observation%20and%20enhancement%20of%20room%20temperature%20bilinear%20magnetoelectric%20resistance%20in%20sputtered%20topological%20semimetal%20Pt3Sn&rft.jtitle=arXiv.org&rft.au=Fan,%20Yihong&rft.date=2023-05-24&rft.eissn=2331-8422&rft_id=info:doi/&rft_dat=%3Cproquest%3E2815837093%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-proquest_journals_28158370933%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2815837093&rft_id=info:pmid/&rfr_iscdi=true