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Phosphorus induced activity-enhancement of Fe-N-C catalysts for high temperature polymer electrolyte membrane fuel cells
Fe-N-C materials with atomically dispersed Fe—N 4 sites could tolerate the poisoning of phosphate, and is regarded as the most promising alternative to costly Pt-based catalysts for the oxygen reduction in high temperature polymer electrolyte membrane fuel cells (HT-PEMFCs). However, they still face...
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Published in: | Nano research 2023-05, Vol.16 (5), p.6531-6536 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Fe-N-C materials with atomically dispersed Fe—N
4
sites could tolerate the poisoning of phosphate, and is regarded as the most promising alternative to costly Pt-based catalysts for the oxygen reduction in high temperature polymer electrolyte membrane fuel cells (HT-PEMFCs). However, they still face the critical issue of insufficient activity in phosphoric acid. Herein, we demonstrate a P-doping strategy to increase the activity of Fe-N-C catalyst via a feasible one-pot method. X-ray absorption spectroscopy and electron microscopy with atomic resolution indicated that the P atom is bonded with the N in Fe—N
4
site through C atoms. The as prepared Fe-NCP catalyst shows a half-wave potential of 0.75 V (vs. reversible hydrogen electrode (RHE), 0.1 M H
3
PO
4
), which is 60 and 40 mV higher than that of Fe-NC and commercial Pt/C catalysts, respectively. More importantly, the Fe-NCP catalyst could deliver a peak power density of 357 mW·cm
−2
in a high temperature fuel cell (160 °C), exceeding the non-noble-metal catalysts ever reported. The enhancement of activity is attributed to the increasing charge density and poisoning tolerance of Fe—N
4
caused by neighboring P. This work not only promotes the practical application of Fe-N-C materials in HT-PEMFCs, but also provides a feasible P-doping method for regulating the structure of single atom site. |
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ISSN: | 1998-0124 1998-0000 |
DOI: | 10.1007/s12274-022-5314-2 |