Identification of Signals Against the Background of Active Interference

The photosensitivity of silicon photodiodes has been calculated with regard to the free carrier absorption in diffusion layers, which makes it possible to establish the requirements for the parameters of photodiodes in order to reduce this effect. It is shown that the transmittance of the long-wavel...

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Bibliographic Details
Published in:Journal of communications technology & electronics 2023-03, Vol.68 (3), p.347-349
Main Authors: Klimanov, E. A., Davletshin, R. V.
Format: Article
Language:English
Subjects:
Absorption
Communications Engineering
Diffusion layers
Engineering
Networks
Photodiodes
Photosensitivity
Silicon
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Summary:The photosensitivity of silicon photodiodes has been calculated with regard to the free carrier absorption in diffusion layers, which makes it possible to establish the requirements for the parameters of photodiodes in order to reduce this effect. It is shown that the transmittance of the long-wavelength radiation in silicon structures can also be decreased by means of the free carrier absorption in diffusion layers.
ISSN:1064-2269
1555-6557
DOI:10.1134/S1064226923030099