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Charge Carrier Transport and Polarization in M/PZT/M Structures
A model of non-stationary charge carrier transport in M/PZT/M ferroelectric structures has been developed. It is assumed that at room temperature, electrons generated by oxygen vacancies are captured by Ti +3 levels and move between them under the action of electric fields caused by the external bia...
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Published in: | Bulletin of the Russian Academy of Sciences. Physics 2023-04, Vol.87 (4), p.482-487 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | A model of non-stationary charge carrier transport in M/PZT/M ferroelectric structures has been developed. It is assumed that at room temperature, electrons generated by oxygen vacancies are captured by Ti
+3
levels and move between them under the action of electric fields caused by the external bias and polarization. The polarization distribution in a PZT film is described with varying degrees of complexity, from a constant value outside the defect layers to one determined by the equation following from the Landau–Ginzburg theory. The performed numerical simulation made it possible to explain the reasons and conditions for the appearance of current-voltage characteristics with unusual current peaks, to show the existence of several solutions in the Landau–Ginzburg model for a film with Schottky barriers, and to reveal the response of charged domain walls to an applied voltage. |
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ISSN: | 1062-8738 1934-9432 |
DOI: | 10.3103/S1062873822701507 |