Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors

Effects of programming/erasing (P/E) and total-ionizing dose (TID) are investigated on 2-and 40-fin charge-trap transistors (CTTs) fabricated in a 14-nm bulk-Si CMOS technology. Significant random telegraph noise (RTN) is observed in as-processed CTTs, especially for 2-fin devices. Trapped charge in...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2023-06, Vol.70 (6), p.1-8
Main Authors: Gorchichko, Mariia, Zhang, En Xia, Reaz, Mahmud, Li, Kan, Wang, Peng Fei, Cao, Jingchen, Brewer, Rachel M., Schrimpf, Ronald D., Reed, Robert A., Sierawski, Brian D., Alles, Michael L., Cox, Jonathan, Moran, Steven L., Iyer, Subramanian S., Fleetwood, Daniel M.
Format: Article
Language:English
Subjects:
1/<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> textit{f}</tex-math> </inline-formula> noise
charge trap transistor (CTT)
defects
Electrical engineering
finFET
FinFETs
Frequency measurement
HfO<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _{\text{2}}</tex-math> </inline-formula>
Logic gates
low-frequency noise (LFN)
Programming
Radiation effects
random telegraph noise (RTN)
random telegraph signal (RTS)
Semiconductor devices
Spatial distribution
total-ionizing dose (TID)
Transistors
Trapped charge
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Description
Summary:Effects of programming/erasing (P/E) and total-ionizing dose (TID) are investigated on 2-and 40-fin charge-trap transistors (CTTs) fabricated in a 14-nm bulk-Si CMOS technology. Significant random telegraph noise (RTN) is observed in as-processed CTTs, especially for 2-fin devices. Trapped charge in programed devices does not significantly affect 1/ \textit{f} noise magnitudes, but P/E leads to trap activation/deactivation, causing changes in border-trap energy and spatial distributions. TID irradiation activates a large number of stable radiation-induced traps.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2023.3265939