Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors

• Published in: IEEE transactions on electron devices 2023-06, Vol.70 (6), p.1-8
• Main Authors: Gorchichko, Mariia, Zhang, En Xia, Reaz, Mahmud, Li, Kan, Wang, Peng Fei, Cao, Jingchen, Brewer, Rachel M., Schrimpf, Ronald D., Reed, Robert A., Sierawski, Brian D., Alles, Michael L., Cox, Jonathan, Moran, Steven L., Iyer, Subramanian S., Fleetwood, Daniel M.
• Format: Article
• Language: English
• Subjects: 1/<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> textit{f}</tex-math> </inline-formula> noise; charge trap transistor (CTT); defects; Electrical engineering; finFET; FinFETs; Frequency measurement; HfO<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _{\text{2}}</tex-math> </inline-formula>; Logic gates; low-frequency noise (LFN); Programming; Radiation effects; random telegraph noise (RTN); random telegraph signal (RTS); Semiconductor devices; Spatial distribution; total-ionizing dose (TID); Transistors; Trapped charge
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2023.3265939

Effects of programming/erasing (P/E) and total-ionizing dose (TID) are investigated on 2-and 40-fin charge-trap transistors (CTTs) fabricated in a 14-nm bulk-Si CMOS technology. Significant random telegraph noise (RTN) is observed in as-processed CTTs, especially for 2-fin devices. Trapped charge in programed devices does not significantly affect 1/ \textit{f} noise magnitudes, but P/E leads to trap activation/deactivation, causing changes in border-trap energy and spatial distributions. TID irradiation activates a large number of stable radiation-induced traps.