Stacked HZO/α-In2Se3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

• Published in: IEEE transactions on electron devices 2023-06, Vol.70 (6), p.3071
• Main Authors: Huo, Jiali, Zhang, Zhaohao, Zhang, Yadong, Zhang, Fan, Gangping Yan, Tian, Guoliang, Xu, Haoqing, Zhan, Guohui, Xu, Gaobo, Zhang, Qingzhu, Yin, Huaxiang, Wu, Zhenhua
• Format: Article
• Language: English
• Subjects: Coercivity; Electric fields; Ferroelectric materials; Ferroelectricity; Field effect transistors; Semiconductor devices
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2023.3269403

In this work, by integrating the ferroelectric Hf0.5Zr0.5O2 (HZO) gate insulator and 2-D ferroelectric semiconductor [Formula Omitted]-In2Se3 channel, ferroelectric field effect transistors (FeFETs) featured with both enhanced large memory windows (MWs) and ultrahigh-speed are demonstrated. Contributing to HZO/[Formula Omitted]-In2Se3 stacked ferroelectrics and the adoption of HZO gate dielectric with the high coercive electric field ([Formula Omitted]), large MWs (4.2 V at [Formula Omitted] sweep range (SR) of ±4 V) are obtained. Besides, owing to the enhanced cross-electric field and the fast polarization switching speed of the HZO layer, the FeFETs show an ultrahigh writing speed of 10 ns. Furthermore, the FeFETs exhibit excellent performances with a high drain current ON/ OFF ratio ([Formula Omitted]), high endurance cycles ([Formula Omitted] cycles), and long retention time ([Formula Omitted] s). These results demonstrate that the FeFETs have considerable potential in ultra-fast nonvolatile memory (NVM) applications.