Stacked HZO/α-In2Se3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

In this work, by integrating the ferroelectric Hf0.5Zr0.5O2 (HZO) gate insulator and 2-D ferroelectric semiconductor [Formula Omitted]-In2Se3 channel, ferroelectric field effect transistors (FeFETs) featured with both enhanced large memory windows (MWs) and ultrahigh-speed are demonstrated. Contribu...

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Published in:IEEE transactions on electron devices 2023-06, Vol.70 (6), p.3071
Main Authors: Huo, Jiali, Zhang, Zhaohao, Zhang, Yadong, Zhang, Fan, Gangping Yan, Tian, Guoliang, Xu, Haoqing, Zhan, Guohui, Xu, Gaobo, Zhang, Qingzhu, Yin, Huaxiang, Wu, Zhenhua
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Language:English
Subjects:
Coercivity
Electric fields
Ferroelectric materials
Ferroelectricity
Field effect transistors
Semiconductor devices
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container_issue 6
container_start_page 3071
container_title IEEE transactions on electron devices
container_volume 70
creator Huo, Jiali
Zhang, Zhaohao
Zhang, Yadong
Zhang, Fan
Gangping Yan
Tian, Guoliang
Xu, Haoqing
Zhan, Guohui
Xu, Gaobo
Zhang, Qingzhu
Yin, Huaxiang
Wu, Zhenhua
description In this work, by integrating the ferroelectric Hf0.5Zr0.5O2 (HZO) gate insulator and 2-D ferroelectric semiconductor [Formula Omitted]-In2Se3 channel, ferroelectric field effect transistors (FeFETs) featured with both enhanced large memory windows (MWs) and ultrahigh-speed are demonstrated. Contributing to HZO/[Formula Omitted]-In2Se3 stacked ferroelectrics and the adoption of HZO gate dielectric with the high coercive electric field ([Formula Omitted]), large MWs (4.2 V at [Formula Omitted] sweep range (SR) of ±4 V) are obtained. Besides, owing to the enhanced cross-electric field and the fast polarization switching speed of the HZO layer, the FeFETs show an ultrahigh writing speed of 10 ns. Furthermore, the FeFETs exhibit excellent performances with a high drain current ON/ OFF ratio ([Formula Omitted]), high endurance cycles ([Formula Omitted] cycles), and long retention time ([Formula Omitted] s). These results demonstrate that the FeFETs have considerable potential in ultra-fast nonvolatile memory (NVM) applications.
doi_str_mv 10.1109/TED.2023.3269403
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_2819498959</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2819498959</sourcerecordid><originalsourceid>FETCH-LOGICAL-p113t-16189a138a2e6b919e1eea71f16d50f9593d05bc7b48211748d4f964089766393</originalsourceid><addsrcrecordid>eNo1j89KAzEYxIMoWKt3jwHP2-ZLstnkKP0PlR62RfBS0s237dZ2U7Mp4mP5Ij6TK-ppZmD4DUPIPbAeADP95WjY44yLnuDKSCYuSAfSNEuMkuqSdBgDnRihxTW5aZp9G5WUvEOOebTFKzo6fVn0vz6TWc1zFHSMIXg8YBFDVdBh9W_7OR6rwtfuXEQf6Hi0pM9V3NHVIQa7q7Y7mp-wpdna0bkNW6RPePTho23Vzr_fkqvSHhq8-9MuWbWIwTSZLyazweM8OQGImIACbSwIbTmqjQGDgGgzKEG5lJUmNcKxdFNkG6k5QCa1k2V7lGmTKSWM6JKHX-4p-LczNnG99-dQt5NrrsFIo38Y3zLAWf8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2819498959</pqid></control><display><type>article</type><title>Stacked HZO/α-In2Se3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Huo, Jiali ; Zhang, Zhaohao ; Zhang, Yadong ; Zhang, Fan ; Gangping Yan ; Tian, Guoliang ; Xu, Haoqing ; Zhan, Guohui ; Xu, Gaobo ; Zhang, Qingzhu ; Yin, Huaxiang ; Wu, Zhenhua</creator><creatorcontrib>Huo, Jiali ; Zhang, Zhaohao ; Zhang, Yadong ; Zhang, Fan ; Gangping Yan ; Tian, Guoliang ; Xu, Haoqing ; Zhan, Guohui ; Xu, Gaobo ; Zhang, Qingzhu ; Yin, Huaxiang ; Wu, Zhenhua</creatorcontrib><description>In this work, by integrating the ferroelectric Hf0.5Zr0.5O2 (HZO) gate insulator and 2-D ferroelectric semiconductor [Formula Omitted]-In2Se3 channel, ferroelectric field effect transistors (FeFETs) featured with both enhanced large memory windows (MWs) and ultrahigh-speed are demonstrated. Contributing to HZO/[Formula Omitted]-In2Se3 stacked ferroelectrics and the adoption of HZO gate dielectric with the high coercive electric field ([Formula Omitted]), large MWs (4.2 V at [Formula Omitted] sweep range (SR) of ±4 V) are obtained. Besides, owing to the enhanced cross-electric field and the fast polarization switching speed of the HZO layer, the FeFETs show an ultrahigh writing speed of 10 ns. Furthermore, the FeFETs exhibit excellent performances with a high drain current ON/ OFF ratio ([Formula Omitted]), high endurance cycles ([Formula Omitted] cycles), and long retention time ([Formula Omitted] s). These results demonstrate that the FeFETs have considerable potential in ultra-fast nonvolatile memory (NVM) applications.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2023.3269403</identifier><language>eng</language><publisher>New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</publisher><subject>Coercivity ; Electric fields ; Ferroelectric materials ; Ferroelectricity ; Field effect transistors ; Semiconductor devices</subject><ispartof>IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.3071</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Huo, Jiali</creatorcontrib><creatorcontrib>Zhang, Zhaohao</creatorcontrib><creatorcontrib>Zhang, Yadong</creatorcontrib><creatorcontrib>Zhang, Fan</creatorcontrib><creatorcontrib>Gangping Yan</creatorcontrib><creatorcontrib>Tian, Guoliang</creatorcontrib><creatorcontrib>Xu, Haoqing</creatorcontrib><creatorcontrib>Zhan, Guohui</creatorcontrib><creatorcontrib>Xu, Gaobo</creatorcontrib><creatorcontrib>Zhang, Qingzhu</creatorcontrib><creatorcontrib>Yin, Huaxiang</creatorcontrib><creatorcontrib>Wu, Zhenhua</creatorcontrib><title>Stacked HZO/α-In2Se3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window</title><title>IEEE transactions on electron devices</title><description>In this work, by integrating the ferroelectric Hf0.5Zr0.5O2 (HZO) gate insulator and 2-D ferroelectric semiconductor [Formula Omitted]-In2Se3 channel, ferroelectric field effect transistors (FeFETs) featured with both enhanced large memory windows (MWs) and ultrahigh-speed are demonstrated. Contributing to HZO/[Formula Omitted]-In2Se3 stacked ferroelectrics and the adoption of HZO gate dielectric with the high coercive electric field ([Formula Omitted]), large MWs (4.2 V at [Formula Omitted] sweep range (SR) of ±4 V) are obtained. Besides, owing to the enhanced cross-electric field and the fast polarization switching speed of the HZO layer, the FeFETs show an ultrahigh writing speed of 10 ns. Furthermore, the FeFETs exhibit excellent performances with a high drain current ON/ OFF ratio ([Formula Omitted]), high endurance cycles ([Formula Omitted] cycles), and long retention time ([Formula Omitted] s). These results demonstrate that the FeFETs have considerable potential in ultra-fast nonvolatile memory (NVM) applications.</description><subject>Coercivity</subject><subject>Electric fields</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Field effect transistors</subject><subject>Semiconductor devices</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNo1j89KAzEYxIMoWKt3jwHP2-ZLstnkKP0PlR62RfBS0s237dZ2U7Mp4mP5Ij6TK-ppZmD4DUPIPbAeADP95WjY44yLnuDKSCYuSAfSNEuMkuqSdBgDnRihxTW5aZp9G5WUvEOOebTFKzo6fVn0vz6TWc1zFHSMIXg8YBFDVdBh9W_7OR6rwtfuXEQf6Hi0pM9V3NHVIQa7q7Y7mp-wpdna0bkNW6RPePTho23Vzr_fkqvSHhq8-9MuWbWIwTSZLyazweM8OQGImIACbSwIbTmqjQGDgGgzKEG5lJUmNcKxdFNkG6k5QCa1k2V7lGmTKSWM6JKHX-4p-LczNnG99-dQt5NrrsFIo38Y3zLAWf8</recordid><startdate>20230601</startdate><enddate>20230601</enddate><creator>Huo, Jiali</creator><creator>Zhang, Zhaohao</creator><creator>Zhang, Yadong</creator><creator>Zhang, Fan</creator><creator>Gangping Yan</creator><creator>Tian, Guoliang</creator><creator>Xu, Haoqing</creator><creator>Zhan, Guohui</creator><creator>Xu, Gaobo</creator><creator>Zhang, Qingzhu</creator><creator>Yin, Huaxiang</creator><creator>Wu, Zhenhua</creator><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20230601</creationdate><title>Stacked HZO/α-In2Se3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window</title><author>Huo, Jiali ; Zhang, Zhaohao ; Zhang, Yadong ; Zhang, Fan ; Gangping Yan ; Tian, Guoliang ; Xu, Haoqing ; Zhan, Guohui ; Xu, Gaobo ; Zhang, Qingzhu ; Yin, Huaxiang ; Wu, Zhenhua</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p113t-16189a138a2e6b919e1eea71f16d50f9593d05bc7b48211748d4f964089766393</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Coercivity</topic><topic>Electric fields</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Field effect transistors</topic><topic>Semiconductor devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huo, Jiali</creatorcontrib><creatorcontrib>Zhang, Zhaohao</creatorcontrib><creatorcontrib>Zhang, Yadong</creatorcontrib><creatorcontrib>Zhang, Fan</creatorcontrib><creatorcontrib>Gangping Yan</creatorcontrib><creatorcontrib>Tian, Guoliang</creatorcontrib><creatorcontrib>Xu, Haoqing</creatorcontrib><creatorcontrib>Zhan, Guohui</creatorcontrib><creatorcontrib>Xu, Gaobo</creatorcontrib><creatorcontrib>Zhang, Qingzhu</creatorcontrib><creatorcontrib>Yin, Huaxiang</creatorcontrib><creatorcontrib>Wu, Zhenhua</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Huo, Jiali</au><au>Zhang, Zhaohao</au><au>Zhang, Yadong</au><au>Zhang, Fan</au><au>Gangping Yan</au><au>Tian, Guoliang</au><au>Xu, Haoqing</au><au>Zhan, Guohui</au><au>Xu, Gaobo</au><au>Zhang, Qingzhu</au><au>Yin, Huaxiang</au><au>Wu, Zhenhua</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stacked HZO/α-In2Se3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window</atitle><jtitle>IEEE transactions on electron devices</jtitle><date>2023-06-01</date><risdate>2023</risdate><volume>70</volume><issue>6</issue><spage>3071</spage><pages>3071-</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><abstract>In this work, by integrating the ferroelectric Hf0.5Zr0.5O2 (HZO) gate insulator and 2-D ferroelectric semiconductor [Formula Omitted]-In2Se3 channel, ferroelectric field effect transistors (FeFETs) featured with both enhanced large memory windows (MWs) and ultrahigh-speed are demonstrated. Contributing to HZO/[Formula Omitted]-In2Se3 stacked ferroelectrics and the adoption of HZO gate dielectric with the high coercive electric field ([Formula Omitted]), large MWs (4.2 V at [Formula Omitted] sweep range (SR) of ±4 V) are obtained. Besides, owing to the enhanced cross-electric field and the fast polarization switching speed of the HZO layer, the FeFETs show an ultrahigh writing speed of 10 ns. Furthermore, the FeFETs exhibit excellent performances with a high drain current ON/ OFF ratio ([Formula Omitted]), high endurance cycles ([Formula Omitted] cycles), and long retention time ([Formula Omitted] s). These results demonstrate that the FeFETs have considerable potential in ultra-fast nonvolatile memory (NVM) applications.</abstract><cop>New York</cop><pub>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</pub><doi>10.1109/TED.2023.3269403</doi></addata></record>
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subjects Coercivity
Electric fields
Ferroelectric materials
Ferroelectricity
Field effect transistors
Semiconductor devices
title Stacked HZO/α-In2Se3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T21%3A16%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Stacked%20HZO/%CE%B1-In2Se3%20Ferroelectric%20Dielectric/Semiconductor%20FET%20With%20Ultrahigh%20Speed%20and%20Large%20Memory%20Window&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Huo,%20Jiali&rft.date=2023-06-01&rft.volume=70&rft.issue=6&rft.spage=3071&rft.pages=3071-&rft.issn=0018-9383&rft.eissn=1557-9646&rft_id=info:doi/10.1109/TED.2023.3269403&rft_dat=%3Cproquest%3E2819498959%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-p113t-16189a138a2e6b919e1eea71f16d50f9593d05bc7b48211748d4f964089766393%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2819498959&rft_id=info:pmid/&rfr_iscdi=true