Extraction Technique for the Conduction Band Minimum Energy in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

The conduction band minimum energy in amorphous oxide semiconductor-based thin film transistors (AOS TFTs) is a key parameter governing the accurate extraction of energy distribution for the subgap density-of-states (DOSs) and carrier mobility. We report a technique for extraction of the gate voltag...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2023-06, Vol.70 (6), p.1-5
Main Authors: Kim, Haesung, Yoo, Han Bin, Lee, Heesung, Ryu, Ji Hee, Park, Ju Young, Han, Seung Hyeop, Yang, Hyojin, Bae, Jong-Ho, Choi, Sung-Jin, Kim, Dae Hwan, Kim, Dong Myong
Format: Article
Language:English
Subjects:
amorphous indium–gallium–zinc–oxide (a-IGZO)-TFTS
Amorphous oxide semiconductor-based thin film transistors (AOS TFTS)
Carrier density
Carrier mobility
conduction band minimum energy
Conduction bands
Density of states
Energy distribution
extraction technique
Gallium
Indium
Indium gallium zinc oxide
Logic gates
mobility edge
Optimized production technology
Optoelectronics
Random access memory
Semiconductor devices
Substrates
Thin film transistors
Thin films
Threshold voltage
Transistors
Zinc
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Summary:The conduction band minimum energy in amorphous oxide semiconductor-based thin film transistors (AOS TFTs) is a key parameter governing the accurate extraction of energy distribution for the subgap density-of-states (DOSs) and carrier mobility. We report a technique for extraction of the gate voltage ( \textit{V}_{\text{CBM}}\text{)} and corresponding energy ( \textit{E}_{\text{F,\text{CBM}}} = \textit{E}_{\text{C-\text{EREF}}}\text{)} for the quasi-Fermi level ( \textit{E}_{\text{F}}\text{)} equal to the conduction band minimum ( \textit{E}_{\text{C}}\text{)} as \textit{V}_{\text{CBM}} = \textit{V}_{\text{GS}} ( \textit{E}_{\text{F}} = \textit{E}_{\text{C}}\text{)} and \textit{E}_{\text{F,\text{CBM}}} = \textit{E}_{\text{F}} ( \textit{V}_{\text{GS}} = \textit{V}_{\text{CBM}}\text{)} . In order to confirm this technique through optoelectronic experimental data, amorphous indium-gallium-zinc-oxide (a-IGZO)-based thin film transistor was irradiated with various wavelengths and power, and obtained \textit{V}_{\text{CBM}} = 7.1 V and
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2023.3269735