Extraction Technique for the Conduction Band Minimum Energy in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

The conduction band minimum energy in amorphous oxide semiconductor-based thin film transistors (AOS TFTs) is a key parameter governing the accurate extraction of energy distribution for the subgap density-of-states (DOSs) and carrier mobility. We report a technique for extraction of the gate voltag...

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Published in:IEEE transactions on electron devices 2023-06, Vol.70 (6), p.1-5
Main Authors: Kim, Haesung, Yoo, Han Bin, Lee, Heesung, Ryu, Ji Hee, Park, Ju Young, Han, Seung Hyeop, Yang, Hyojin, Bae, Jong-Ho, Choi, Sung-Jin, Kim, Dae Hwan, Kim, Dong Myong
Format: Article
Language:English
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amorphous indium–gallium–zinc–oxide (a-IGZO)-TFTS
Amorphous oxide semiconductor-based thin film transistors (AOS TFTS)
Carrier density
Carrier mobility
conduction band minimum energy
Conduction bands
Density of states
Energy distribution
extraction technique
Gallium
Indium
Indium gallium zinc oxide
Logic gates
mobility edge
Optimized production technology
Optoelectronics
Random access memory
Semiconductor devices
Substrates
Thin film transistors
Thin films
Threshold voltage
Transistors
Zinc
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creator Kim, Haesung
Yoo, Han Bin
Lee, Heesung
Ryu, Ji Hee
Park, Ju Young
Han, Seung Hyeop
Yang, Hyojin
Bae, Jong-Ho
Choi, Sung-Jin
Kim, Dae Hwan
Kim, Dong Myong
description The conduction band minimum energy in amorphous oxide semiconductor-based thin film transistors (AOS TFTs) is a key parameter governing the accurate extraction of energy distribution for the subgap density-of-states (DOSs) and carrier mobility. We report a technique for extraction of the gate voltage ( \textit{V}_{\text{CBM}}\text{)} and corresponding energy ( \textit{E}_{\text{F,\text{CBM}}} = \textit{E}_{\text{C-\text{EREF}}}\text{)} for the quasi-Fermi level ( \textit{E}_{\text{F}}\text{)} equal to the conduction band minimum ( \textit{E}_{\text{C}}\text{)} as \textit{V}_{\text{CBM}} = \textit{V}_{\text{GS}} ( \textit{E}_{\text{F}} = \textit{E}_{\text{C}}\text{)} and \textit{E}_{\text{F,\text{CBM}}} = \textit{E}_{\text{F}} ( \textit{V}_{\text{GS}} = \textit{V}_{\text{CBM}}\text{)} . In order to confirm this technique through optoelectronic experimental data, amorphous indium-gallium-zinc-oxide (a-IGZO)-based thin film transistor was irradiated with various wavelengths and power, and obtained \textit{V}_{\text{CBM}} = 7.1 V and
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We report a technique for extraction of the gate voltage (<inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{CBM}}\text{)}</tex-math> </inline-formula> and corresponding energy (<inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{F,\text{CBM}}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{C-\text{EREF}}}\text{)}</tex-math> </inline-formula> for the quasi-Fermi level (<inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{F}}\text{)}</tex-math> </inline-formula> equal to the conduction band minimum (<inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{C}}\text{)}</tex-math> </inline-formula> as <inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{CBM}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{GS}}</tex-math> </inline-formula> (<inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{F}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{C}}\text{)}</tex-math> </inline-formula> and <inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{F,\text{CBM}}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{F}}</tex-math> </inline-formula> (<inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{GS}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{CBM}}\text{)}</tex-math> </inline-formula>. In order to confirm this technique through optoelectronic experimental data, amorphous indium-gallium-zinc-oxide (a-IGZO)-based thin film transistor was irradiated with various wavelengths and power, and obtained <inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{CBM}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> 7.1 V and <inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{F \text{CBM}}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> 71 meV in the dark state. This technique is expected to be useful in the accurate characterization of the subgap DOS and the effective mobility in AOS TFTs through a simple and effective extraction process.]]></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2023.3269735</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>amorphous indium–gallium–zinc–oxide (a-IGZO)-TFTS ; Amorphous oxide semiconductor-based thin film transistors (AOS TFTS) ; Carrier density ; Carrier mobility ; conduction band minimum energy ; Conduction bands ; Density of states ; Energy distribution ; extraction technique ; Gallium ; Indium ; Indium gallium zinc oxide ; Logic gates ; mobility edge ; Optimized production technology ; Optoelectronics ; Random access memory ; Semiconductor devices ; Substrates ; Thin film transistors ; Thin films ; Threshold voltage ; Transistors ; Zinc</subject><ispartof>IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.1-5</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c292t-f714f33e62162af17499c7f98f203413b7feb111ab16baadfa8760d61f05c1f13</citedby><cites>FETCH-LOGICAL-c292t-f714f33e62162af17499c7f98f203413b7feb111ab16baadfa8760d61f05c1f13</cites><orcidid>0000-0003-2444-4493 ; 0000-0003-2567-4012 ; 0000-0003-1301-2847 ; 0000-0002-0858-5854 ; 0000-0002-1786-7132 ; 0000-0002-3392-9444</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10120653$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Kim, Haesung</creatorcontrib><creatorcontrib>Yoo, Han Bin</creatorcontrib><creatorcontrib>Lee, Heesung</creatorcontrib><creatorcontrib>Ryu, Ji Hee</creatorcontrib><creatorcontrib>Park, Ju Young</creatorcontrib><creatorcontrib>Han, Seung Hyeop</creatorcontrib><creatorcontrib>Yang, Hyojin</creatorcontrib><creatorcontrib>Bae, Jong-Ho</creatorcontrib><creatorcontrib>Choi, Sung-Jin</creatorcontrib><creatorcontrib>Kim, Dae Hwan</creatorcontrib><creatorcontrib>Kim, Dong Myong</creatorcontrib><title>Extraction Technique for the Conduction Band Minimum Energy in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description><![CDATA[The conduction band minimum energy in amorphous oxide semiconductor-based thin film transistors (AOS TFTs) is a key parameter governing the accurate extraction of energy distribution for the subgap density-of-states (DOSs) and carrier mobility. We report a technique for extraction of the gate voltage (<inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{CBM}}\text{)}</tex-math> </inline-formula> and corresponding energy (<inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{F,\text{CBM}}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{C-\text{EREF}}}\text{)}</tex-math> </inline-formula> for the quasi-Fermi level (<inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{F}}\text{)}</tex-math> </inline-formula> equal to the conduction band minimum (<inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{C}}\text{)}</tex-math> </inline-formula> as <inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{CBM}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{GS}}</tex-math> </inline-formula> (<inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{F}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{C}}\text{)}</tex-math> </inline-formula> and <inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{F,\text{CBM}}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{F}}</tex-math> </inline-formula> (<inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{GS}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{CBM}}\text{)}</tex-math> </inline-formula>. In order to confirm this technique through optoelectronic experimental data, amorphous indium-gallium-zinc-oxide (a-IGZO)-based thin film transistor was irradiated with various wavelengths and power, and obtained <inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{CBM}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> 7.1 V and <inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{F \text{CBM}}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> 71 meV in the dark state. This technique is expected to be useful in the accurate characterization of the subgap DOS and the effective mobility in AOS TFTs through a simple and effective extraction process.]]></description><subject>amorphous indium–gallium–zinc–oxide (a-IGZO)-TFTS</subject><subject>Amorphous oxide semiconductor-based thin film transistors (AOS TFTS)</subject><subject>Carrier density</subject><subject>Carrier mobility</subject><subject>conduction band minimum energy</subject><subject>Conduction bands</subject><subject>Density of states</subject><subject>Energy distribution</subject><subject>extraction technique</subject><subject>Gallium</subject><subject>Indium</subject><subject>Indium gallium zinc oxide</subject><subject>Logic gates</subject><subject>mobility edge</subject><subject>Optimized production technology</subject><subject>Optoelectronics</subject><subject>Random access memory</subject><subject>Semiconductor devices</subject><subject>Substrates</subject><subject>Thin film transistors</subject><subject>Thin films</subject><subject>Threshold voltage</subject><subject>Transistors</subject><subject>Zinc</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNpNkDFPwzAQhS0EEqWwMzBYYk7x2YkTj6WkpVJRl7CwRE5iE1eNXexEav89qcrA9HS6773TPYQegcwAiHgp8rcZJZTNGOUiZckVmkCSpJHgMb9GE0IgiwTL2C26C2E3jjyO6QQd82PvZd0bZ3Gh6taan0Fh7TzuW4UXzjbDZfkqbYM_jDXd0OHcKv99wsbieef8oXVDwGvbmKGLVnK_P-uXsXW0PZpG4aIdwaXZd7jw0gYTeufDPbrRch_Uw59O0ecyLxbv0Wa7Wi_mm6imgvaRTiHWjClOgVOpIY2FqFMtMk0Ji4FVqVYVAMgKeCVlo2WWctJw0CSpQQOboudL7sG78bXQlzs3eDueLGkGYoyjVIwUuVC1dyF4pcuDN530pxJIee63HPstz_2Wf_2OlqeLxSil_uFACU8Y-wU1I3eg</recordid><startdate>20230601</startdate><enddate>20230601</enddate><creator>Kim, Haesung</creator><creator>Yoo, Han Bin</creator><creator>Lee, Heesung</creator><creator>Ryu, Ji Hee</creator><creator>Park, Ju Young</creator><creator>Han, Seung Hyeop</creator><creator>Yang, Hyojin</creator><creator>Bae, Jong-Ho</creator><creator>Choi, Sung-Jin</creator><creator>Kim, Dae Hwan</creator><creator>Kim, Dong Myong</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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We report a technique for extraction of the gate voltage (<inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{CBM}}\text{)}</tex-math> </inline-formula> and corresponding energy (<inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{F,\text{CBM}}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{C-\text{EREF}}}\text{)}</tex-math> </inline-formula> for the quasi-Fermi level (<inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{F}}\text{)}</tex-math> </inline-formula> equal to the conduction band minimum (<inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{C}}\text{)}</tex-math> </inline-formula> as <inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{CBM}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{GS}}</tex-math> </inline-formula> (<inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{F}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{C}}\text{)}</tex-math> </inline-formula> and <inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{F,\text{CBM}}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{F}}</tex-math> </inline-formula> (<inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{GS}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{CBM}}\text{)}</tex-math> </inline-formula>. In order to confirm this technique through optoelectronic experimental data, amorphous indium-gallium-zinc-oxide (a-IGZO)-based thin film transistor was irradiated with various wavelengths and power, and obtained <inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{CBM}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> 7.1 V and <inline-formula> <tex-math notation="LaTeX">\textit{E}_{\text{F \text{CBM}}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> 71 meV in the dark state. This technique is expected to be useful in the accurate characterization of the subgap DOS and the effective mobility in AOS TFTs through a simple and effective extraction process.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2023.3269735</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0003-2444-4493</orcidid><orcidid>https://orcid.org/0000-0003-2567-4012</orcidid><orcidid>https://orcid.org/0000-0003-1301-2847</orcidid><orcidid>https://orcid.org/0000-0002-0858-5854</orcidid><orcidid>https://orcid.org/0000-0002-1786-7132</orcidid><orcidid>https://orcid.org/0000-0002-3392-9444</orcidid></addata></record>
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source IEEE Electronic Library (IEL) Journals
subjects amorphous indium–gallium–zinc–oxide (a-IGZO)-TFTS
Amorphous oxide semiconductor-based thin film transistors (AOS TFTS)
Carrier density
Carrier mobility
conduction band minimum energy
Conduction bands
Density of states
Energy distribution
extraction technique
Gallium
Indium
Indium gallium zinc oxide
Logic gates
mobility edge
Optimized production technology
Optoelectronics
Random access memory
Semiconductor devices
Substrates
Thin film transistors
Thin films
Threshold voltage
Transistors
Zinc
title Extraction Technique for the Conduction Band Minimum Energy in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T13%3A09%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Extraction%20Technique%20for%20the%20Conduction%20Band%20Minimum%20Energy%20in%20Amorphous%20Indium-Gallium-Zinc-Oxide%20Thin%20Film%20Transistors&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Kim,%20Haesung&rft.date=2023-06-01&rft.volume=70&rft.issue=6&rft.spage=1&rft.epage=5&rft.pages=1-5&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2023.3269735&rft_dat=%3Cproquest_ieee_%3E2819499229%3C/proquest_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c292t-f714f33e62162af17499c7f98f203413b7feb111ab16baadfa8760d61f05c1f13%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2819499229&rft_id=info:pmid/&rft_ieee_id=10120653&rfr_iscdi=true