Electronic structure of few-layer black phosphorus from \(\mu\)-ARPES

Black phosphorus (BP) stands out among two-dimensional (2D) semiconductors because of its high mobility and thickness dependent direct band gap. However, the quasiparticle band structure of ultrathin BP has remained inaccessible to experiment thus far. Here we use a recently developed laser-based mi...

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Published in:arXiv.org 2023-06
Main Authors: Margot, Florian, Lisi, Simone, Cucchi, Irène, Cappelli, Edoardo, Hunter, Andrew, Gutiérrez-Lezama, Ignacio, Ma, KeYuan, Fabian von Rohr, Berthod, Christophe, Petocchi, Francesco, Poncé, Samuel, Marzari, Nicola, Gibertini, Marco, Tamai, Anna, Morpurgo, Alberto F, Baumberger, Felix
Format: Article
Language:English
Subjects:
Anisotropy
Electronic structure
Elementary excitations
Ladders
Laser applications
Low dimensional semiconductors
Phosphorus
Photoelectric emission
Quantum wells
Thickness
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Summary:Black phosphorus (BP) stands out among two-dimensional (2D) semiconductors because of its high mobility and thickness dependent direct band gap. However, the quasiparticle band structure of ultrathin BP has remained inaccessible to experiment thus far. Here we use a recently developed laser-based micro-focus angle resolved photoemission (\(\mu\)-ARPES) system to establish the electronic structure of 2-9 layer BP from experiment. Our measurements unveil ladders of anisotropic, quantized subbands at energies that deviate from the scaling observed in conventional semiconductor quantum wells. We quantify the anisotropy of the effective masses and determine universal tight-binding parameters which provide an accurate description of the electronic structure for all thicknesses.
ISSN:2331-8422
DOI:10.48550/arxiv.2306.00749