Co‐ and Nd‐Codoping‐Induced High Magnetization in Layered MoS2 Crystals

Magnetic 2D‐layered materials are promising for the applications of spintronic devices and compact magnetic devices. There are only a few reported intrinsic 2D‐based magnetic materials. Therefore, introducing magnetic element into 2D‐layered materials is an effective strategy to synthesize 2D‐layere...

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Published in:Physica status solidi. PSS-RRL. Rapid research letters 2023-06, Vol.17 (6), p.n/a
Main Authors: Ahmed, Sohail, Murmu, Peter P., Sathish, Clastinrusselraj Indirathankam, Guan, Xinwei, Geng, Rex, Bao, Nina, Liu, Rong, Kennedy, John, Ding, Jun, Peng, Mingli, Vinu, Ajayan, Yi, Jiabao
Format: Article
Language:English
Subjects:
2D materials
codoping
Crystal defects
Earth
Ferromagnetism
Interstitials
Ion implantation
ion implantations
Layered materials
Magnetic devices
Magnetic materials
Magnetization
Molybdenum disulfide
Neodymium
rare-earth elements
transition-metal dichalcogenides
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Summary:Magnetic 2D‐layered materials are promising for the applications of spintronic devices and compact magnetic devices. There are only a few reported intrinsic 2D‐based magnetic materials. Therefore, introducing magnetic element into 2D‐layered materials is an effective strategy to synthesize 2D‐layered magnetic materials. Recently, ferromagnetism has been realized by doping single transition‐metal or rare‐earth element, whereas, there is no report by codoping of both transition‐metal and rare‐earth elements. Herein, Co and Nd are codoped into MoS2‐layered crystals by ion implantation. An extremely high magnetization of 6916.3 emu cm−3 at 10 K and 80.3 emu cm−3 at 300 K is achieved. The high magnetization is attributed to the contribution from both transition‐metal and rare‐earth elements as well as defects, such as vacancy of cation ions, anions, or interstitials. Hence, herein, a useful strategy may be opened to develop high‐performance magnetic materials based on 2D‐layered materials. Herein, Co and Nd are codoped into MoS2‐layered crystals by ion implantation. An extremely high magnetization of 6916.3 emu cm−3 at 10 K and 80.3 emu cm−3 at 300 K has been achieved. The high magnetization is attributed to the contribution from both transition metals and rare‐earth elements as well as defects, such as vacancy of cation ions.
ISSN:1862-6254
1862-6270
DOI:10.1002/pssr.202200348