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Analysing the performance ceiling of RbSnGeI3-based lead-free stable perovskite solar cell

We explored a lead-free, stable and inorganic perovskite absorber RbSn 0.5 Ge 0.5 I 3 for photovoltaic application. The stability in RbSn 0.5 Ge 0.5 I 3 is due to the passivation effect of Ge at the mixed Sn-Ge B site the absorber. A detailed analysis of extrinsic losses is performed theoretically b...

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Published in:Optical and quantum electronics 2023-08, Vol.55 (8), Article 734
Main Authors: Gomathi, S., Sivapriya, J., Kalaiyarasi, M., Sivakumar, J., Rubavathy, S. Jaanaa, Kumar, Atul
Format: Article
Language:English
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Summary:We explored a lead-free, stable and inorganic perovskite absorber RbSn 0.5 Ge 0.5 I 3 for photovoltaic application. The stability in RbSn 0.5 Ge 0.5 I 3 is due to the passivation effect of Ge at the mixed Sn-Ge B site the absorber. A detailed analysis of extrinsic losses is performed theoretically by utilizing the optical and electrical characteristics of the RbSn 0.5 Ge 0.5 I 3 system. Evaluation of various recombination regimes has provided a performance ceiling limit and correspondingly an optimal device design. We summarised the extent of spectrum (thermalization and non-absorption) losses and extrinsic (resistance and Shockley–Read–Hall (SRH) limited) losses in RbSn 0.5 Ge 0.5 I 3 . Finally, an efficiency waterfall chart summarises the RbSn 0.5 Ge 0.5 I 3 efficiency for different extrinsic loss regimes. Results summarized in this study are expected to stimulate experimentalists in this field to fabricate a stable lead-free highly efficient perovskite solar cell.
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-023-04980-w