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Analysing the performance ceiling of RbSnGeI3-based lead-free stable perovskite solar cell
We explored a lead-free, stable and inorganic perovskite absorber RbSn 0.5 Ge 0.5 I 3 for photovoltaic application. The stability in RbSn 0.5 Ge 0.5 I 3 is due to the passivation effect of Ge at the mixed Sn-Ge B site the absorber. A detailed analysis of extrinsic losses is performed theoretically b...
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Published in: | Optical and quantum electronics 2023-08, Vol.55 (8), Article 734 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We explored a lead-free, stable and inorganic perovskite absorber RbSn
0.5
Ge
0.5
I
3
for photovoltaic application. The stability in RbSn
0.5
Ge
0.5
I
3
is due to the passivation effect of Ge at the mixed Sn-Ge B site the absorber. A detailed analysis of extrinsic losses is performed theoretically by utilizing the optical and electrical characteristics of the RbSn
0.5
Ge
0.5
I
3
system. Evaluation of various recombination regimes has provided a performance ceiling limit and correspondingly an optimal device design. We summarised the extent of spectrum (thermalization and non-absorption) losses and extrinsic (resistance and Shockley–Read–Hall (SRH) limited) losses in RbSn
0.5
Ge
0.5
I
3
. Finally, an efficiency waterfall chart summarises the RbSn
0.5
Ge
0.5
I
3
efficiency for different extrinsic loss regimes. Results summarized in this study are expected to stimulate experimentalists in this field to fabricate a stable lead-free highly efficient perovskite solar cell. |
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ISSN: | 0306-8919 1572-817X |
DOI: | 10.1007/s11082-023-04980-w |