Growth, investigation on optical and luminescence properties of Cd2+ ion-doped 4-N,N-dimethylamino-4′-N′-methylstilbazolium tosylate single crystal for photonic devices

• Published in: Journal of materials science. Materials in electronics 2023-06, Vol.34 (16), p.1320, Article 1320
• Main Authors: Sivakumar, Thirumuruganantham, Logeswari, Arivazhagan, William Carry, Munusamy, Kalyana Sundar, Jeyaperumal, Kalpana, Munisamy
• Format: Article
• Language: English
• Subjects: Cadmium; Characterization and Evaluation of Materials; Chemistry and Materials Science; Crystal growth; Differential thermal analysis; Dopants; Emission analysis; Emission spectra; Energy dispersive X ray analysis; Luminescence; Materials Science; Optical and Electronic Materials; Optical properties; Organic materials; Photoluminescence; Photonic crystals; Single crystals; Thermodynamic properties; Tunable lasers; Vibration mode; X ray analysis; X ray powder diffraction
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-023-10673-7

Second-order nonlinear active metal-organic materials of CdSO 4 (1 and 3%)-doped DAST (CdS-DAST) single crystals were effectively grown using the low-cost slow evaporation method. The grown crystals have a monoclinic structure with non-centrosymmetric space group Cc, determined using single crystal and X-ray powder diffraction investigation. The presence of metal ions (Cd 2+ ) in the DAST crystal was affirmed using energy-dispersive X-ray analysis. The presence of groups in vibrational modes in the lower frequency region is confirmed by FTIR analysis. Pure’s lower cut-off absorbance wavelength is 388 nm, and the CdS dopant crystals are 381, 380 nm and conforming to the n–π* electronic transition from the ground to excited energy states are examined by UV–Vis–NIR spectrophotometer. Thermal characterization of pure and dopant crystals was also performed by TG/DTA analysis. The photoluminescence spectra show green emission from the crystals at 526 and 527 nm, suggesting upsides for LEDs and laser-tunable devices. Enrichment of nonlinear activity is identified in the CdS-doped DAST crystals, and they have 1.21 and 1.52 times superior SHG than pristine DAST. Eventually, these results illustrate the grown crystal as applicable in developing photonic devices.