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Preparation and anti-reflection performance of porous silicon/gold nanocomposite structures
In recent years, the development of battery technology has greatly improved the efficiency of solar energy utilization. Due to the limited band gap width of silicon, the energy provided by the photon with wavelength over 1107 nm is not enough to make the valence band electron transition, which great...
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Published in: | The European physical journal. D, Atomic, molecular, and optical physics Atomic, molecular, and optical physics, 2023-06, Vol.77 (6), Article 108 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In recent years, the development of battery technology has greatly improved the efficiency of solar energy utilization. Due to the limited band gap width of silicon, the energy provided by the photon with wavelength over 1107 nm is not enough to make the valence band electron transition, which greatly limits the conversion and utilization of solar radiation energy in silicon-based solar cells. Based on the local surface plasmon resonance effect, the optical band gap of semiconductor materials can be widened. In this paper, porous silicon/gold (Au) nanocomposite structures were prepared by electrochemical anodic corrosion and added chloroauric acid solution in the corrosive liquids. The growth of gold nanostructures can be controlled by adjusting the concentration of chloroauric acid in the corrosive liquids. The spectral scanning in the wavelength range of 200–1400 nm shows that when the concentration of chloroauric acid is 0.01 mol/L, the best anti-reflection performance is obtained, and the average reflectance of porous silicon/gold nanocluster composite structure is reduced to 2.14%. This process provides a simple and economical method for the preparation of anti-reflection coating and has important research significance in the anti-reflection layer of solar cell devices.
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ISSN: | 1434-6060 1434-6079 |
DOI: | 10.1140/epjd/s10053-023-00674-w |