Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO2 Capacitors

In this article, the influence of interface roughness on the ferroelectric (FE) performance of Hf0.5Zr0.5O2 (HZO) films was experimentally investigated. The HZO capacitor with a rough interface structure shows a higher remnant polarization ([Formula Omitted] than that with a flat interface structure...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2023-07, Vol.70 (7), p.3788
Main Authors: Zhang, Yueyuan, Peng, Yue, Liu, Fenning, Li, Kaixuan, Ni Zhong, Liu, Yan, Yue Hao, Han, Genquan
Format: Article
Language:English
Subjects:
Capacitors
Charge injection
Electric fields
Ferroelectricity
Hafnium oxide
Interface roughness
Leakage current
Polarization
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Summary:In this article, the influence of interface roughness on the ferroelectric (FE) performance of Hf0.5Zr0.5O2 (HZO) films was experimentally investigated. The HZO capacitor with a rough interface structure shows a higher remnant polarization ([Formula Omitted] than that with a flat interface structure. However, although the device with the rough interface can achieve an improved [Formula Omitted] value, it generates a higher electric field within the HZO film and causes more obvious charge injection at the TaON/HZO interface, leading to the increase of interface traps ([Formula Omitted] and leakage current ([Formula Omitted] as well as the degradation of endurance. The study is helpful for understanding and optimizing the growth technics of HfO2-based FE memory for advanced node technology.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2023.3279064