16×16 Solar-Blind UV Detector Based on β-Ga2O3 Sensors

In this work, a 16×16 Ga 2 O 3 photodetector array is introduced. The Ga 2 O 3 thin film was deposited on c -sapphire substrate by employing metal-organic chemical vapor deposition, and the array device was constructed via UV photolithography, lift-off and electron-beam evaporation techniques. The h...

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Bibliographic Details
Published in:IEEE electron device letters 2023-05, Vol.44 (7), p.1-1
Main Authors: Shen, Gao-Hui, Liu, Zeng, Zhang, Mao-Lin, Guo, Yu-Feng, Tang, Wei-Hua
Format: Article
Language:English
Subjects:
array
Arrays
Dark current
Electrodes
Electron beams
Ga<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 O<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">3
Gallium
Gallium oxides
Imaging
Lighting
Metalorganic chemical vapor deposition
Organic chemicals
Organic chemistry
Photodetector
Photodetectors
Photolithography
Photometers
Photonic band gap
Quantum efficiency
Sapphire
Sensors
solar-blind detection
Substrates
Thin films
Ultraviolet detectors
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Description
Summary:In this work, a 16×16 Ga 2 O 3 photodetector array is introduced. The Ga 2 O 3 thin film was deposited on c -sapphire substrate by employing metal-organic chemical vapor deposition, and the array device was constructed via UV photolithography, lift-off and electron-beam evaporation techniques. The high rejection ratio of 8×10 3 indicate good wavelength selectivity. The photodetector displayed responsivity of 60.7 A W -1 , specific detectivity of 2.2×10 14 cm √ Hz W -1 (Jones), external quantum efficiency of 3×104%, linear dynamic region of 120.34 dB, respectively. Excited by a laser, the photodetector had a rise time of 6 ms and a decay time of 48 ms, suggesting a fast response ability for tracing light signal. For the 256 pixels in this array, the dark current locates from 2 pA to 4 pA, and shown no disparity. More than 75% of the units have a maximum standard deviation of less than 10%. This work could show a guidance for advancing the solar-blind UV sensing devices and further applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2023.3272909