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High Hole Injection for Nitrogen-Polarity AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
High hole injection is desired for improving the performance of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs). In this work, we adopted a compositionally graded p-Al y1 Ga 1-y1 N/Al 0.85 Ga 0.15 N superlattice (SL) structure in a nitrogen-polarity DUV LED. Our numerical simulation...
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Published in: | IEEE electron device letters 2023-07, Vol.44 (7), p.1-1 |
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Main Authors: | , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | High hole injection is desired for improving the performance of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs). In this work, we adopted a compositionally graded p-Al y1 Ga 1-y1 N/Al 0.85 Ga 0.15 N superlattice (SL) structure in a nitrogen-polarity DUV LED. Our numerical simulation results show that this SL structure is very beneficial to the hole injection into the active region, and leads to a low turn-on voltage and device resistance. This is significant because a low device resistance means a low power consumption and a high wall-plug efficiency. Meanwhile, a DUV LED with compositionally graded SL has a peak internal quantum efficiency (72%) that is much higher than that of the reference DUV LED without an SL (56%). This work provides an attractive approach to effectively injecting holes into the active region of a nitrogen-polarity AlGaN-based DUV LED. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2023.3279450 |