Piezoelectric effect in 2H and 3R phases of α-In2Se3

α-In2Se3 is a two-dimensional (2D) ferroelectric semiconductor at RT. Here we study piezoelectric d33 coefficients in 2H and 3R phases of α-In2Se3 single crystals at RT. Dynamic displacement signals measured with a laser Doppler vibrometer increase linearly with applied electric fields, consistent w...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2023-06, Vol.62 (6), p.061006
Main Authors: Ueda, Keisuke, Murata, Ryoga, Sasagawa, Takao, Shiomi, Yuki
Format: Article
Language:English
Subjects:
Electric fields
Ferroelectricity
In
laser Doppler vibrometer
Laser doppler vibrometers
piezoelectric effect
Piezoelectricity
Single crystals
van der Waals material
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Summary:α-In2Se3 is a two-dimensional (2D) ferroelectric semiconductor at RT. Here we study piezoelectric d33 coefficients in 2H and 3R phases of α-In2Se3 single crystals at RT. Dynamic displacement signals measured with a laser Doppler vibrometer increase linearly with applied electric fields, consistent with the inverse piezoelectric effect. The estimated d33 coefficients are about 50 pm V−1 in the 2H phase and about 10 pm V−1 in the 3R phase. These d33 values in α-In2Se3 are large among 2D piezoelectric materials reported before. The slightly larger d33 value in the 2H phase could be attributed to the stacking structure with in-plane rotation, which allows the 2D layers to move more easily in the perpendicular direction.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/acdc72