Conductance Fluctuations and Domain Depinning in Quasi-2D Charge-Density-Wave 1T-TaS\(_2\) Thin Films

We investigated the temperature dependence of the conductance fluctuations in thin films of the quasi-two-dimensional 1T-TaS\(_2\) van der Waals material. The conductance fluctuations, determined from the derivative current-voltage characteristics of two-terminal 1T-TaS\(_2\) devices, appear promine...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2023-07
Main Authors: Brown, Jonas O, Taheri, Maedeh, Kargar, Fariborz, Salgado, Ruben, Tekwam Geremew, Rumyantsev, Sergey, Lake, Roger K, Balandin, Alexander A
Format: Article
Language:English
Subjects:
Charge density waves
Current voltage characteristics
Electric fields
Film thickness
Temperature dependence
Thin films
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We investigated the temperature dependence of the conductance fluctuations in thin films of the quasi-two-dimensional 1T-TaS\(_2\) van der Waals material. The conductance fluctuations, determined from the derivative current-voltage characteristics of two-terminal 1T-TaS\(_2\) devices, appear prominently at the electric fields that correspond to the transitions between various charge-density-wave macroscopic quantum condensate phases and at the onset of the depinning of the charge density wave domains. The depinning threshold field, \(E_D\), monotonically increases with decreasing temperature within the nearly commensurate charge-density-wave phase. The \(E_D\) value increases with the decreasing 1T-TaS\(_2\) film thickness, revealing the surface pinning of the charge density waves. Our analysis suggests that depinning is absent in the commensurate phase. It is induced by the electric field but facilitated by local heating. The measured trends for \(E_D\) of the domain depinning are important for understanding the physics of charge density waves in quasi-two-dimensional crystals and for developing electronic devices based on this type of quantum materials.
ISSN:2331-8422