Charge transport studies of tris[4-(diethylamino)phenyl]amine and OFET application

• Published in: Journal of materials science. Materials in electronics 2023-07, Vol.34 (20), p.1556, Article 1556
• Main Authors: Dhayal, Sardul Singh, Nain, Abhimanyu, Punia, Rajesh, Shrivastava, Ashutosh, Kumar, Amit
• Format: Article
• Language: English
• Subjects: Carrier mobility; Characterization and Evaluation of Materials; Charge transport; Chemistry and Materials Science; Current carriers; Diffraction patterns; Field effect transistors; Hopping conduction; Ions; Materials Science; Optical and Electronic Materials; Semiconductor devices; Silicon dioxide; Silicon substrates; Temperature dependence; Thin films; Threshold voltage; Transport properties
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-023-10926-5

This study demonstrates the charge transport properties of Tris[4-(diethylamino) phenyl]amine (TDAPA) in the frequency and temperature range of 0.1 Hz–1 MHz and 253–333 K, respectively using impedance spectroscopy. X-ray diffraction patterns of TDAPA powder and thin film indicate the polycrystalline nature of the studied material. The depressed semicircle in Nyquist’s plot indicates a non-Debye-type relaxation mechanism. The Almond-West power law and the Jump relaxation model were applied to investigate the charge transport and hopping mechanism. The exponent value was calculated and found well within range and the dc conductivity was determined using the same. Activation energy corresponding to dc conductivity and hopping was calculated and found to be 0.37 eV and 0.31 eV, respectively. The temperature-dependent behaviour of the exponent (s) is investigated in detail. The charge carrier mobility of TDAPA was also calculated by fabricating an organic field effect transistor in bottom gate top contact geometry on Si/SiO2 substrate. OFET characteristics of the material indicate the p-type behaviour with charge carrier mobility of 5.14 × 10 −4 cm 2 /Vs, 2.36 Vs, the threshold voltage of 33.61 V, and 2.19 × 10 3 On/Off.