Linewidth enhancement factor of type-II red InGaN/GaNSb/GaN quantum-well lasers

We investigate the linewidth enhancement factor of the type-II red InGaN/GaNSb/GaN quantum-well (QW) laser, employing a non-Markovian gain model with many-body effects included. It is shown that the linewidth enhancement factor of the type-II red InGaN/GaNSb/GaN QW structure is almost independent of...

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Published in:Japanese Journal of Applied Physics 2023-07, Vol.62 (7), p.72003
Main Authors: Park, Seoung-Hwan, Shim, Jong-In, Shin, Dong-Soo
Format: Article
Language:English
Subjects:
GaN
GaNSb
Indium gallium nitrides
linewidth enhancement factor
optical gain
Quantum well lasers
refractive index
type-II quantum wells
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Shim, Jong-In
Shin, Dong-Soo
description We investigate the linewidth enhancement factor of the type-II red InGaN/GaNSb/GaN quantum-well (QW) laser, employing a non-Markovian gain model with many-body effects included. It is shown that the linewidth enhancement factor of the type-II red InGaN/GaNSb/GaN QW structure is almost independent of the peak-gain coefficient. This behavior is contrasted with that of the conventional type-I InGaN/GaN QW structure, whose linewidth enhancement factor increases as the peak-gain coefficient increases. These results can be explained by the peak-gain dependencies of the differential refractive-index change and the differential gain. Moreover, the type-II red InGaN/GaNSb/GaN QW laser yields much smaller values of the linewidth enhancement factor than the conventional type-I InGaN/GaN QW laser. The type-II red InGaN/GaNSb/GaN QW laser with a relatively small, excitation-independent linewidth enhancement factor is expected to be highly useful for many practical applications.
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2841477050</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2841477050</sourcerecordid><originalsourceid>FETCH-LOGICAL-c344t-d6e6abfd4d3b3500a8ed387478c7db0a1d62941549816dbb53425c8e09b9481f3</originalsourceid><addsrcrecordid>eNp1kE1LxDAQhoMouK7-AG8BL17i5rNJj7LoWljcg3oOaZOyLf3apGXZf29rRS96mBlmeOed4QHgluAHJhRXK8K4RBxHYmUyx2JzBhY_o3OwwJgSxGNKL8FVCOXYRoKTBdhti8YdC9vvoWv2pslc7Zoe5ibrWw_bHPanzqEkgd5ZmDQb87oa4y2dMjwMpumHGh1dVcHKBOfDNbjITRXczXddgo_np_f1C9ruNsn6cYsyxnmPbOQik-aWW5YygbFRzjIluVSZtCk2xEY05kTwWJHIpqlgnIpMORynMVckZ0twN_t2vj0MLvS6bAffjCc1VZxwKbHAo4rMqsy3IXiX684XtfEnTbD-4qYnSHqCpGdu4879vFO03a9pWZpOR1RLjSXFmOnOTk-gP6T_W38CbF57Xg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2841477050</pqid></control><display><type>article</type><title>Linewidth enhancement factor of type-II red InGaN/GaNSb/GaN quantum-well lasers</title><source>IOPscience journals</source><source>Institute of Physics</source><creator>Park, Seoung-Hwan ; Shim, Jong-In ; Shin, Dong-Soo</creator><creatorcontrib>Park, Seoung-Hwan ; Shim, Jong-In ; Shin, Dong-Soo</creatorcontrib><description>We investigate the linewidth enhancement factor of the type-II red InGaN/GaNSb/GaN quantum-well (QW) laser, employing a non-Markovian gain model with many-body effects included. It is shown that the linewidth enhancement factor of the type-II red InGaN/GaNSb/GaN QW structure is almost independent of the peak-gain coefficient. This behavior is contrasted with that of the conventional type-I InGaN/GaN QW structure, whose linewidth enhancement factor increases as the peak-gain coefficient increases. These results can be explained by the peak-gain dependencies of the differential refractive-index change and the differential gain. Moreover, the type-II red InGaN/GaNSb/GaN QW laser yields much smaller values of the linewidth enhancement factor than the conventional type-I InGaN/GaN QW laser. The type-II red InGaN/GaNSb/GaN QW laser with a relatively small, excitation-independent linewidth enhancement factor is expected to be highly useful for many practical applications.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/ace39a</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>GaN ; GaNSb ; Indium gallium nitrides ; linewidth enhancement factor ; optical gain ; Quantum well lasers ; refractive index ; type-II quantum wells</subject><ispartof>Japanese Journal of Applied Physics, 2023-07, Vol.62 (7), p.72003</ispartof><rights>2023 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c344t-d6e6abfd4d3b3500a8ed387478c7db0a1d62941549816dbb53425c8e09b9481f3</citedby><cites>FETCH-LOGICAL-c344t-d6e6abfd4d3b3500a8ed387478c7db0a1d62941549816dbb53425c8e09b9481f3</cites><orcidid>0000-0002-0863-9138</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1347-4065/ace39a/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,38845,53815</link.rule.ids></links><search><creatorcontrib>Park, Seoung-Hwan</creatorcontrib><creatorcontrib>Shim, Jong-In</creatorcontrib><creatorcontrib>Shin, Dong-Soo</creatorcontrib><title>Linewidth enhancement factor of type-II red InGaN/GaNSb/GaN quantum-well lasers</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>We investigate the linewidth enhancement factor of the type-II red InGaN/GaNSb/GaN quantum-well (QW) laser, employing a non-Markovian gain model with many-body effects included. It is shown that the linewidth enhancement factor of the type-II red InGaN/GaNSb/GaN QW structure is almost independent of the peak-gain coefficient. This behavior is contrasted with that of the conventional type-I InGaN/GaN QW structure, whose linewidth enhancement factor increases as the peak-gain coefficient increases. These results can be explained by the peak-gain dependencies of the differential refractive-index change and the differential gain. Moreover, the type-II red InGaN/GaNSb/GaN QW laser yields much smaller values of the linewidth enhancement factor than the conventional type-I InGaN/GaN QW laser. The type-II red InGaN/GaNSb/GaN QW laser with a relatively small, excitation-independent linewidth enhancement factor is expected to be highly useful for many practical applications.</description><subject>GaN</subject><subject>GaNSb</subject><subject>Indium gallium nitrides</subject><subject>linewidth enhancement factor</subject><subject>optical gain</subject><subject>Quantum well lasers</subject><subject>refractive index</subject><subject>type-II quantum wells</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LxDAQhoMouK7-AG8BL17i5rNJj7LoWljcg3oOaZOyLf3apGXZf29rRS96mBlmeOed4QHgluAHJhRXK8K4RBxHYmUyx2JzBhY_o3OwwJgSxGNKL8FVCOXYRoKTBdhti8YdC9vvoWv2pslc7Zoe5ibrWw_bHPanzqEkgd5ZmDQb87oa4y2dMjwMpumHGh1dVcHKBOfDNbjITRXczXddgo_np_f1C9ruNsn6cYsyxnmPbOQik-aWW5YygbFRzjIluVSZtCk2xEY05kTwWJHIpqlgnIpMORynMVckZ0twN_t2vj0MLvS6bAffjCc1VZxwKbHAo4rMqsy3IXiX684XtfEnTbD-4qYnSHqCpGdu4879vFO03a9pWZpOR1RLjSXFmOnOTk-gP6T_W38CbF57Xg</recordid><startdate>20230701</startdate><enddate>20230701</enddate><creator>Park, Seoung-Hwan</creator><creator>Shim, Jong-In</creator><creator>Shin, Dong-Soo</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-0863-9138</orcidid></search><sort><creationdate>20230701</creationdate><title>Linewidth enhancement factor of type-II red InGaN/GaNSb/GaN quantum-well lasers</title><author>Park, Seoung-Hwan ; Shim, Jong-In ; Shin, Dong-Soo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-d6e6abfd4d3b3500a8ed387478c7db0a1d62941549816dbb53425c8e09b9481f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>GaN</topic><topic>GaNSb</topic><topic>Indium gallium nitrides</topic><topic>linewidth enhancement factor</topic><topic>optical gain</topic><topic>Quantum well lasers</topic><topic>refractive index</topic><topic>type-II quantum wells</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Seoung-Hwan</creatorcontrib><creatorcontrib>Shim, Jong-In</creatorcontrib><creatorcontrib>Shin, Dong-Soo</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Seoung-Hwan</au><au>Shim, Jong-In</au><au>Shin, Dong-Soo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Linewidth enhancement factor of type-II red InGaN/GaNSb/GaN quantum-well lasers</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2023-07-01</date><risdate>2023</risdate><volume>62</volume><issue>7</issue><spage>72003</spage><pages>72003-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>We investigate the linewidth enhancement factor of the type-II red InGaN/GaNSb/GaN quantum-well (QW) laser, employing a non-Markovian gain model with many-body effects included. It is shown that the linewidth enhancement factor of the type-II red InGaN/GaNSb/GaN QW structure is almost independent of the peak-gain coefficient. This behavior is contrasted with that of the conventional type-I InGaN/GaN QW structure, whose linewidth enhancement factor increases as the peak-gain coefficient increases. These results can be explained by the peak-gain dependencies of the differential refractive-index change and the differential gain. Moreover, the type-II red InGaN/GaNSb/GaN QW laser yields much smaller values of the linewidth enhancement factor than the conventional type-I InGaN/GaN QW laser. The type-II red InGaN/GaNSb/GaN QW laser with a relatively small, excitation-independent linewidth enhancement factor is expected to be highly useful for many practical applications.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.35848/1347-4065/ace39a</doi><tpages>3</tpages><orcidid>https://orcid.org/0000-0002-0863-9138</orcidid></addata></record>
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source IOPscience journals; Institute of Physics
subjects GaN
GaNSb
Indium gallium nitrides
linewidth enhancement factor
optical gain
Quantum well lasers
refractive index
type-II quantum wells
title Linewidth enhancement factor of type-II red InGaN/GaNSb/GaN quantum-well lasers
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-21T23%3A43%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Linewidth%20enhancement%20factor%20of%20type-II%20red%20InGaN/GaNSb/GaN%20quantum-well%20lasers&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Park,%20Seoung-Hwan&rft.date=2023-07-01&rft.volume=62&rft.issue=7&rft.spage=72003&rft.pages=72003-&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPB6&rft_id=info:doi/10.35848/1347-4065/ace39a&rft_dat=%3Cproquest_cross%3E2841477050%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c344t-d6e6abfd4d3b3500a8ed387478c7db0a1d62941549816dbb53425c8e09b9481f3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2841477050&rft_id=info:pmid/&rfr_iscdi=true