High-Breakdown P-Channel GaN MOS-HFETs with Al2O3-Dielectric and Drain Field-Plate

This work reports record-high three-terminal on-state drain-source breakdown voltage (BVDS) of -735 V in p-channel GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with a drain field-plate (DFP). High-k and wide-gap Al2O3 was deposited as the gate oxide and surface...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2023-01, Vol.11, p.1-1
Main Authors: Ke, Jian-Hong, Lee, Ching-Sung, Li, Yu-Xuan, Hsu, Wei-Chou
Format: Article
Language:English
Subjects:
Al2O3
Aluminum oxide
Al₂O
Circuit design
Contact resistance
Current density
Dielectric breakdown
drain field-plate
Dry etching
Electric contacts
Electric vehicles
Field effect transistors
Gallium nitrides
GaN
Heterostructures
Logic gates
Metal oxide semiconductors
MOS devices
MOS-HFET
non-vacuum ultrasonic spray pyrolysis deposition
P-channel
Power switching circuits
Rough surfaces
Semiconductor devices
Spray pyrolysis
Surface morphology
Surface roughness
Surface treatment
Switching circuits
Two dimensional hole gas
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Summary:This work reports record-high three-terminal on-state drain-source breakdown voltage (BVDS) of -735 V in p-channel GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with a drain field-plate (DFP). High-k and wide-gap Al2O3 was deposited as the gate oxide and surface passivation by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. Good source/drain ohmic contacts were obtained by devising an Mg-doped p++-GaN capper. Enhanced two-dimension hole gas (2DHG) characteristics and current densities have also been achieved by the devised p-GaN/GaN/AlN/Al0.3Ga0.7N heterostructure. The present p-channel GaN MOS-HFET design with (without) DFP has demonstrated superior on/off current ratio (Ion/Ioff) of 2 × 106 (9.2 × 105), maximum drain-source current density (IDS, max) of -9.5 (-10.6) mA/mm at VDS = 20 V, two-terminal off-state gate-drain breakdown voltage (BVGD) of 710 (520) V, and BVDS of -735 (-545) V, respectively. The present design is suitable for applications in high-voltage complementary power-switching circuits of electric vehicle (EV) electronics.
ISSN:2168-6734
DOI:10.1109/JEDS.2023.3294911