Investigation of Scaling on the Sensitivity and Performance of Tunnel FET Biosensor

• Published in: IEEE sensors letters 2023-08, Vol.7 (8), p.1-4
• Main Authors: Priyanka, Rana, Ashwani K.
• Format: Article
• Language: English
• Subjects: Biosensors; Counter-doped Si<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">0.65 Ge<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">0.35 pocket; dopingless Tunnel FET biosensor; Logic gates; Molecular biophysics; Performance enhancement; Scaling; scaling capability; Sensitivity; Sensors; TFETs; Threshold voltage; Tunneling; Tunnels
• ISSN: 2475-1472; 2475-1472
• DOI: 10.1109/LSENS.2023.3296346

This research investigates the scaling capability of the dopingless Tunnel FET (TFET) biosensor. A counter-doped Si 0.65 Ge 0.35 pocket and a tunnel gate-engineered structure are incorporated to improve the performance of the proposed biosensor in the presence of Trap-Assisted-Tunneling (TAT). The effect of the scaling is examined in respect of the gate length, body thickness, and the underlap length between the gate and the drain to note the performance of the biosensor. The study shows that scaling the gate length improves the sensitivity metrics such as threshold voltage sensitivity and on-current sensitivity of the biosensor while sacrificing I on /I off within acceptable limits according to ITRS guidelines. In addition to this, other important metrics such as I on /I off ratio, drain-induced barrier thinning, and on-current are also considered to analyze the scaling capability of the proposed biosensor.