3.3: Higher External Quantum Efficiency with Lower Current Density Injection of <10 μm Pixel Size Arrays for Display Application

In this paper, the gallium nitride (GaN) based Micro‐LED was fabricated based on a self‐aligned process with hydroxide treatment and ALD passivation from 100 μm down to 3 μm. The different current spreading performance was characterized based on the series resistance analysis. Then the size‐dependen...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2023-04, Vol.54 (S1), p.41-44
Main Authors: Liu, Yibo, Zhanghu, Mengyuan, Feng, Feng, Li, Zichun, Chan, Ka-Wah, Kwok, Hoi Sing, Liu, Zhaojun
Format: Article
Language:English
Subjects:
Arrays
capacitance-voltage characterization
Carrier density
Carrier injection
Current density
display arrays
external quantum efficiency
Gallium nitrides
GaN-based Micro-LEDs
Quantum efficiency
series resistance
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Summary:In this paper, the gallium nitride (GaN) based Micro‐LED was fabricated based on a self‐aligned process with hydroxide treatment and ALD passivation from 100 μm down to 3 μm. The different current spreading performance was characterized based on the series resistance analysis. Then the size‐dependent carrier concentration profile was demonstrated via the capacitancevoltage measurement, identifying the various carrier injection behavior by different size. Finally, the external quantum efficiency and luminance versus current density dependence for array device and the single device was compared, revealing a higher efficiency at lower current density for array device, which is favorable for display application.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.16215