Stepped Doped High k VDMOS: Switching Characteristics

• Published in: Physica status solidi. A, Applications and materials science Applications and materials science, 2023-08, Vol.220 (15), p.n/a
• Main Authors: Shukla, Shaivya, Parmar, Onika, Rajput, Amit Singh, Mishra, Zeesha
• Format: Article
• Language: English
• Subjects: dielectric; HK VDMOS; power devices; stepped doping; Switching; switching analysis
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.202300311

This paper presents the switching analysis of vertical stepped doped high k VDMOS. The introduction of vertical step doping in the n pillar of HK VDMOS brings improvement in switching performance. All the analysis of proposed and conventional device is carried out using silvaco ATLAS tool. Significant reduction in the switching delay is noted for different values of k. It is observed to be 40% for k = 20, 28.57% for k = 10, and 31.76% for k = 5. So the proposed step doped high k VDMOS can replace the high k VDMOS when fast switching is desired. This paper shows the switching comparison between High K‐vertically diffused metal oxide semiconductor (HK‐VDMOS) and stepped high K‐vertically diffused metal oxide semiconductor (SHK‐VDMOS). It has been suggested that Stepped doping increases transconductance and minimizes switching delay. Switching time is reduced by 30.58% when K = 5. The reduction is 31.76% and 40%, for K = 10 and K = 20, respectively.