A 32-GHz Eight-Way Power Amplifier MMIC in 150 nm GaN HEMT Technology

This paper presents a 32 GHz high-power amplifier (HPA) with a design strategy to achieve high-power output with reliable operation for Ka-band deep space satellite communication in 150 nm GaN HEMT technology. The presented Ka-band HPA employs a cascaded two-stage common source amplifier topology, a...

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Bibliographic Details
Published in:Electronics (Basel) 2023-08, Vol.12 (15), p.3278
Main Authors: Park, Hyeong-Geun, Trinh, Van-Son, Lee, Mun-Kyo, Lee, Bok-Hyung, Park, Jung-Dong
Format: Article
Language:English
Subjects:
Circuit design
Communications systems
Design and construction
Efficiency
Extremely high frequencies
Gallium arsenide
Gallium nitrides
Heat conductivity
High electron mobility transistors
Methods
Moon
Power amplifiers
Power gain
Radio communications
Receivers & amplifiers
Satellite communications
Silicon
Space exploration
Topology
Transistors
Transmission lines
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Summary:This paper presents a 32 GHz high-power amplifier (HPA) with a design strategy to achieve high-power output with reliable operation for Ka-band deep space satellite communication in 150 nm GaN HEMT technology. The presented Ka-band HPA employs a cascaded two-stage common source amplifier topology, and the output stage comprises an eight-way power combining network in the current mode. The interstage matching network is designed with the bandpass configuration utilizing capacitors and transmission lines to provide better stability at the low-frequency regime. The implemented Ka-band HPA achieved a power gain of 7.3 dB at the input level with the maximum PAE at 32 GHz, and the 3 dB gain bandwidth was 3.5 GHz (31.3~34.8 GHz). The saturated output power at the peak power-added efficiency (PAE) of 19.3% was 38.2 dBm, and the output 1 dB gain compression point (OP1 dB) was 27.4 dBm in the measurement. The designed HPA consumes an area of 19.35 mm2 including RF pads and DC pads.
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics12153278