Total Ionizing Dose Response of a 22-nm Compiled Fully-Depleted-Silicon-on-Insulator Static Random Access Memory

The results of total ionizing dose (TID) experiments on fully-depleted silicon-on-insulator (FDSOI) static random access memory (SRAM) are presented. Using 60 Co gamma irradiation, tests were conducted at multiple voltages and with and without read and write assists. The results demonstrate cell sta...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2023-08, Vol.70 (8), p.1-1
Main Authors: Clark, Lawrence T., Brown, William E., Holbert, Keith E., Rao, A., Bikkina, P., Turowski, Marek, Levy, Andrew, Olvarez, T., Butler, Jim D., YoungSciortino, Clifford, Guertin, Steven M.
Format: Article
Language:English
Subjects:
Circuit stability
Circuits
Depletion
FDSOI
Gamma irradiation
Integrated circuits
Irradiation
MOS devices
Radiation effects
Silicon
Silicon-on-insulator
SOI (semiconductors)
SRAM
SRAM cells
Static random access memory
TID
Transistors
γ Radiation
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Summary:The results of total ionizing dose (TID) experiments on fully-depleted silicon-on-insulator (FDSOI) static random access memory (SRAM) are presented. Using 60 Co gamma irradiation, tests were conducted at multiple voltages and with and without read and write assists. The results demonstrate cell stability past 200 krad(Si) TID in standard operational modes. The impact of read and write assists and read timing via margin mode tests are examined. We also report input-output (IO) level translation circuit failures, as well as anomalous circuit failures attributable to IO at relatively low TID dose. Finally, we show post-TID anneal and low voltage SRAM results.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2023.3244106