Review of the Failure Mechanism and Methodologies of IGBT Bonding Wire

In the welding insulated gate bipolar transistor (IGBT) module, the module failure caused by bonding wire failure accounts for about 70% of the total module failure. Therefore, it is essential to improve the reliability of the IGBT module bonding wire. This article is devoted to a comprehensive revi...

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Bibliographic Details
Published in:IEEE transactions on components, packaging, and manufacturing technology (2011) packaging, and manufacturing technology (2011), 2023-07, Vol.13 (7), p.1045-1057
Main Authors: Li, Qi, Li, Yang-Bo, Fu, Hao-Dong, Tu, Chun-Ming, Xiao, Biao, Xiao, Fan, Zhai, Dong-Yuan, Lu, Ji-Wu
Format: Article
Language:English
Subjects:
Accelerated aging experiment
Accelerated aging tests
Bonding
bonding wire
Condition monitoring
Failure analysis
failure mechanism
Failure mechanisms
insulated gate bipolar transistor (IGBT)
Insulated gate bipolar transistors
Layout
lifetime prediction model
Modules
Prediction models
Reliability
Semiconductor devices
Welding
Wire
Wires
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Description
Summary:In the welding insulated gate bipolar transistor (IGBT) module, the module failure caused by bonding wire failure accounts for about 70% of the total module failure. Therefore, it is essential to improve the reliability of the IGBT module bonding wire. This article is devoted to a comprehensive review of the mechanism of IGBT bonding wire degradation and failure. The development and progress of related research methodologies on the reliability of the IGBT module bonding wire are introduced, including multiphysical field simulation technology, accelerated aging test (AAT), lifetime prediction model, and condition monitoring technology.
ISSN:2156-3950
2156-3985
DOI:10.1109/TCPMT.2023.3297224