Simulation of Bipolar-Type Resistive Switching Devices Using a Recursive Approach to the Dynamic Memdiode Model

Very often researchers in the field of resistive switching devices or memristors need to model their experimental data using a compact representation without dealing with the complexities of a circuit simulator or a differential equation solver. Moreover, once a given device is simulated, one is alw...

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Bibliographic Details
Published in:IEEE electron device letters 2023-09, Vol.44 (9), p.1-1
Main Authors: Miranda, E., Piros, E., Aguirre, F.L., Kim, T., Schreyer, P., Gehrunger, J., Oster, T., Hofmann, K., Sune, J., Hochberger, C., Alff, L.
Format: Article
Language:English
Subjects:
Circuits
Differential equations
Integrated circuit modeling
Mathematical models
memristor
Numerical models
OxRAM
Recursive methods
ReRAM
Resistance
resistive switching
Simulation
Switches
Switching
Voltage
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Summary:Very often researchers in the field of resistive switching devices or memristors need to model their experimental data using a compact representation without dealing with the complexities of a circuit simulator or a differential equation solver. Moreover, once a given device is simulated, one is always tempted to find out what would be the effect of changing the value or dependence of one or several model parameters in a simple and straightforward way. In this letter, we provide such a tool. The dynamic memdiode model for the conduction characteristics of resistive switching devices has been rewritten and simplified so as to comply with these demanding requirements. The model formulation is essentially the same except that it is now expressed using a recursive approach fully compatible with its original foundations. This has been possible thanks to the inherent symmetry of the model equations and to the unification of the physical description of the set and reset processes. We show how the proposed approach can be used as a test bench for different hypotheses, in particular, we focus here on the role played by the characteristic switching times during the state transitions.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2023.3298023