High Vth and Improved Gate Reliability in P-GaN Gate HEMTs with Oxidation Interlayer

In this letter, we apply an oxidation technique for p-GaN to a normally-off p-GaN/AlGaN/GaN HEMT to improve the threshold voltage and gate reliability. Oxygen-plasma and low-temperature Oxygen post-annealing treatment (OPAT) of p-GaN before the deposition of gate metal has introduced a 5 nm oxidatio...

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Bibliographic Details
Published in:IEEE electron device letters 2023-09, Vol.44 (9), p.1-1
Main Authors: Jia, Mao, Hou, Bin, Yang, Ling, Jia, Fuchun, Niu, Xuerui, Du, Jiale, Chang, Qingyuan, Zhang, Meng, Wu, Mei, Zhang, Xinchuang, Lu, Hao, Ma, Xiaohua, Hao, Yue
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Breakdown
Electric breakdown
Failure rates
Gallium nitrides
Gate reliability
HEMTs
High electron mobility transistors
Interlayers
Logic gates
Low temperature
MODFETs
Normally-off
O<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 plasma
Oxidation
Oxygen plasma
Plasmas
Reliability
Resistance
Threshold voltage
time-dependent gate breakdown (TDGB)
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Summary:In this letter, we apply an oxidation technique for p-GaN to a normally-off p-GaN/AlGaN/GaN HEMT to improve the threshold voltage and gate reliability. Oxygen-plasma and low-temperature Oxygen post-annealing treatment (OPAT) of p-GaN before the deposition of gate metal has introduced a 5 nm oxidation interlayer, resulting in a significant improvement in gate breakdown voltage, from 10.4 V to 20.6 V. Thanks to this interlayer, the threshold voltage of p-GaN gate HEMTs is increased from 1.9 V to 4.6 V, while an almost same on-state resistance and a higher drain breakdown voltage are obtained. Time-dependent gate breakdown measurement shows OPAT-HEMTs have a maximum on-state gate drive voltage of 9.2 V for a 10-year lifetime with a 63 % gate failure rate. In addition, a more stable threshold voltage under gate stress indicates the promising application of this technology in GaN power devices.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2023.3295064