Controlled Self Compliance Filamentary Memory Behavior in Al/NiFe2O4/FTO Resistive Switching Device

Herein, we report a controlled non-volatile bipolar resistive switching in nanostructured NiFe 2 O 4 films using a capacitor like Al(aluminum)/NiFe 2 O 4 /FTO(fluorine-doped tin oxide) metal–insulator-metal device, which shows uniform resistive switching with a resistance ratio of high resistance st...

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Bibliographic Details
Published in:National Academy of Sciences, India. Proceedings. Section A. Physical Sciences India. Proceedings. Section A. Physical Sciences, 2023-09, Vol.93 (3), p.451-457
Main Authors: Pandey, Vidit, Nehla, Priyanka, Munjal, Sandeep
Format: Article
Language:English
Subjects:
Aluminum
Applied and Technical Physics
Atomic
Electric potential
Electroforming
Fluorine
High resistance
Low resistance
Molecular
Nickel ferrites
Optical and Plasma Physics
Physics
Physics and Astronomy
Quantum Physics
Random access memory
Research Article
Space charge
Switching
Tin oxides
Voltage
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Summary:Herein, we report a controlled non-volatile bipolar resistive switching in nanostructured NiFe 2 O 4 films using a capacitor like Al(aluminum)/NiFe 2 O 4 /FTO(fluorine-doped tin oxide) metal–insulator-metal device, which shows uniform resistive switching with a resistance ratio of high resistance state (HRS) to low resistance state (LRS) more than 3 × 10 2 , accompanied with electroforming-free feature without any application of compliance current (ICC). The device can operate (read and switch) in small voltage and current ranges that makes it a low-power resistive switching device. The conduction mechanism in LRS was found to be Ohmic, whereas the HRS was governed by space charge-limited conduction mechanism. The current voltage and resistance temperature measurements indicate the presence of an interfacial AlO x layer with oxygen-related defects near the top Al/NiFe 2 O 4 interface. The device exhibits good program/erase endurance properties, acceptable memory window, and uniform resistive switching. In addition, different intermediate resistance states between HRS and LRS can be obtained in a controlled manner by choosing different stop voltages during the gradual RESET process, which makes the device a multilevel RS device and a potential candidate for future non-volatile resistive random access memory (RRAM).
ISSN:0369-8203
2250-1762
DOI:10.1007/s40010-023-00842-y