Anisotropic Grain Growth of Al-Si Wire Under Electromigration Tests in Power Devices

The microstructure evolution of Al-1 wt% Si alloy wires with a diameter of 50.8 μm bonded on Cu metallization was investigated under electromigration (EM) tests with a current density of 7 × 10 4 A/cm 2 at an ambient temperature of 150 °C. After the EM tests, microstructure of the wire evolved from...

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Bibliographic Details
Published in:JOM (1989) 2023-09, Vol.75 (9), p.3807-3815
Main Authors: Tsau, Yan-Wen, Ouyang, Fan-Yi
Format: Article
Language:English
Subjects:
Aluminum
Ambient temperature
Annealing
Bamboo
Chemistry/Food Science
Copper
Crack propagation
Earth Sciences
Electromigration
Engineering
Environment
Evolution
Grain growth
Intermetallic compounds
Ion beams
Metallizing
Microstructure
Morphology
Physics
Scanning electron microscopy
Silicon base alloys
Simulation
Technical Article
Temperature
Wire
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Summary:The microstructure evolution of Al-1 wt% Si alloy wires with a diameter of 50.8 μm bonded on Cu metallization was investigated under electromigration (EM) tests with a current density of 7 × 10 4 A/cm 2 at an ambient temperature of 150 °C. After the EM tests, microstructure of the wire evolved from submicron slender grains into bamboo-type grains with diameters 100 times larger than the original ones because of anisotropic grain growth (AGG) in the radial direction of wire. The orientations of grains also changed from highly [111] oriented into random distribution. In addition, bamboo nodes created by distortion of bamboo-type grains were found near cathodes while protrusions were observed near anodes of the wire. The mechanisms of AGG as well as the orientation change are proposed and delineated in this study.
ISSN:1047-4838
1543-1851
DOI:10.1007/s11837-023-05965-6