Interfaced Structures between Halide Perovskites: From Basics to Construction to Optoelectronic Applications

• Published in: Advanced energy materials 2023-09, Vol.13 (33), p.n/a
• Main Authors: Xiao, Shuang, Qian, Wei, Yang, Shihe
• Format: Article
• Language: English
• Subjects: Energy levels; halide perovskites; heterojunctions; homojunctions; interfaces; Ion migration; Light emitting diodes; Optoelectronics; Perovskites; Photovoltaic cells; Solar cells
• ISSN: 1614-6832; 1614-6840
• DOI: 10.1002/aenm.202201472

The tsunami of research on halide perovskites over the last decade is sparked by the unexpected revelation of their singular properties, creating a new field of perovskite optoelectronics with great achievements. Soon recognized is the importance of perovskite–perovskite (pe–pe) interfaced structures with coherent interfaces on account of the ease with which to tailor perovskite semiconducting properties, and the prospect to inject new functions and boost device performance. There have been prominent developments in the pe–pe interfaced structures concerning their innovative construction strategies, distinctive properties, and interesting optoelectronic applications. This article provides an overview of recent advances on the pe–pe interfaced structures with a view to informing their rational design and guiding the improvement of the derivate devices. It begins with introduction of the structures, energy levels, band alignments, and ion migration pertaining to the pe–pe interfaced structures. Next, five synthetic approaches are systematically presented. Then, theories, simulations, and characterizations of the interfaced structures are discussed. This is followed by highlighting the distinctive applications of the pe–pe interfaced structures in solar cells, detectors, and light‐emitting diodes. Finally, the review is concluded by comprehensively summing up the key points covered and pointing out promising research directions along the line for future endeavors. The potentiality of interfaced structures between halide perovskites is predicated on the vast tunable space of perovskites, the ease with which to tailor perovskite semiconducting properties and the prospect to inject new functions. This article reviews recent advances on the perovskite–perovskite interfaced structures with a view to informing their rational design for optoelectronic devices.