Bandgap Fluctuations, Hot Carriers, and Band‐to‐Acceptor Recombination in Cu2ZnSn(S,Se)4 Microcrystals

Temperature and laser power dependencies of the band‐to‐acceptor recombination in Cu2ZnSn(S x Se1−x )4 (x = 0.7) microcrystals, which exhibit large bandgap energy fluctuations, are studied. The average depth of these fluctuations is approximately 79 meV. The shape of the corresponding wide photolumi...

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Published in:Physica status solidi. PSS-RRL. Rapid research letters 2023-09, Vol.17 (9), p.n/a
Main Authors: Krustok, Jüri, Kaupmees, Reelika, Abbasi, Nafiseh, Muska, Katri, Mengü, Idil, Timmo, Kristi
Format: Article
Language:English
Subjects:
bandgap fluctuations
Carrier lifetime
defects
effective carrier temperature
Energy gap
kesterites
Lasers
Microcrystals
Minority carriers
Photoluminescence
Temperature
Temperature dependence
Valence band
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Kaupmees, Reelika
Abbasi, Nafiseh
Muska, Katri
Mengü, Idil
Timmo, Kristi
description Temperature and laser power dependencies of the band‐to‐acceptor recombination in Cu2ZnSn(S x Se1−x )4 (x = 0.7) microcrystals, which exhibit large bandgap energy fluctuations, are studied. The average depth of these fluctuations is approximately 79 meV. The shape of the corresponding wide photoluminescence (PL) band is analyzed using a modified localized‐state ensemble model. The temperature dependence of this PL band is demonstrated to be influenced by the redistribution of holes between potential wells in the valence band with varying depths. The shape of this band at different temperatures is well fitted when an effective carrier temperature is introduced. This temperature is found to be approximately 300 K higher than the lattice temperature in the samples, and it is mainly caused by the very short minority carrier lifetime. According to the laser power‐dependent PL studies, there is a consistent reduction in the effective carrier temperature as the laser power increases. This phenomenon is explained by the dominance of nonradiative Shockley–Read–Hall recombination at lower temperatures. Temperature and laser power dependencies of the band‐to‐acceptor recombination in Cu2ZnSn(S x Se1−x )4 (x = 0.7) microcrystals, which exhibit large bandgap energy fluctuations, are studied. The shape of the corresponding wide photoluminescence (PL) band is analyzed using a modified localized‐state ensemble model. The shape of this band at different temperatures is well fitted when an effective carrier temperature is introduced.
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subjects bandgap fluctuations
Carrier lifetime
defects
effective carrier temperature
Energy gap
kesterites
Lasers
Microcrystals
Minority carriers
Photoluminescence
Temperature
Temperature dependence
Valence band
title Bandgap Fluctuations, Hot Carriers, and Band‐to‐Acceptor Recombination in Cu2ZnSn(S,Se)4 Microcrystals
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