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Vacancy-Engineered Phonon Polaritons in \(\alpha\)-MoO\(_3\)
Low-symmetry van der Waals materials have enabled strong confinement of mid-infrared light through hyperbolic phonon polaritons (HPhPs) at the nanoscale. Yet, the bottleneck persists in manipulating the intrinsic polaritonic dispersion to drive further progress in phonon-polaritonics. Here, we prese...
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Published in: | arXiv.org 2023-09 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | Low-symmetry van der Waals materials have enabled strong confinement of mid-infrared light through hyperbolic phonon polaritons (HPhPs) at the nanoscale. Yet, the bottleneck persists in manipulating the intrinsic polaritonic dispersion to drive further progress in phonon-polaritonics. Here, we present a thermomechanical strategy to manipulate the HPhPs in \(\alpha\)-MoO\(_3\) using high pressure and temperature treatment. The hot pressing engineers the stoichiometry of \(\alpha\)-MoO\(_3\) by controllably introducing oxygen vacancy defects (OVDs), which cause a semiconductor-to-semimetal transition. Our density functional theory and finite-difference time-domain results, combined with experimental studies show that the OVDs induce a metastable metallic state by reducing the bandgap while modifying the intrinsic dielectric permittivity of \(\alpha\)-MoO\(_3\). Photo-induced force microscopy confirms an average dielectric permittivity tunability of \(|\Delta\varepsilon/\varepsilon|\approx0.35\) within a Reststrahlen band of \(\alpha\)-MoO\(_3\), resulting in drastic shifts in the HPhP dispersion. The polariton lifetimes for pristine and hot-pressed flakes were measured as \(0.92 \pm 0.06\) and \(0.86 \pm 0.11\) ps, respectively, exhibiting a loss of only 7%, while the group velocity exhibited an increase of \(38.8 \pm 0.2\)%. The OVDs in \(\alpha\)-MoO\(_3\) provide a low-loss platform that enables active tuning of mid-infrared HPhPs and have a profound impact on applications in super-resolution imaging, nanoscale thermal manipulation, boosted molecular sensing, and on-chip photonic circuits. |
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ISSN: | 2331-8422 |