Killer defect responsible for reverse leakage current in halide vapor phase epitaxial (011) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh sensitive emission microscopy and synchrotron x-ray topography

In this study, we identify the killer defect responsible for the reverse leakage in the halide vapor phase epitaxial (011) β-Ga2O3 Schottky barrier diode via ultrahigh sensitive emission microscopy, synchrotron x-ray topography, and scanning transmission electron microscopy. A polycrystalline defect...

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Bibliographic Details
Published in:Applied physics letters 2023-09, Vol.123 (12)
Main Authors: Sdoeung, Sayleap, Otsubo, Yuto, Sasaki, Kohei, Kuramata, Akito, Kasu, Makoto
Format: Article
Language:English
Subjects:
Applied physics
Crystal defects
Emission analysis
Emission microscopy
Gallium oxides
Leakage current
Microcracks
Polycrystals
Scanning electron microscopy
Scanning transmission electron microscopy
Schottky diodes
Synchrotron radiation
Synchrotrons
Vapor phases
X ray topography
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Summary:In this study, we identify the killer defect responsible for the reverse leakage in the halide vapor phase epitaxial (011) β-Ga2O3 Schottky barrier diode via ultrahigh sensitive emission microscopy, synchrotron x-ray topography, and scanning transmission electron microscopy. A polycrystalline defect was found to be causing a leakage current of −5.1 μA at a reverse bias of −50 V. They were distributed across the wafer with a density ranging from 10 to 10 3   cm − 2. Cross-sectional scanning electron microscopy of the polycrystalline defect revealed domains with various crystal orientations accompanied by a (100)-oriented micro-crack and dislocations along the [010] direction.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0170398