A Refinement Multilevel Turn-off Method for Dynamic Latch-up and Tail Current Suppression in DC Breaker Ultra-High Current Switch Applications

The instantaneous current turn- off capability of the insulated gate bipolar transistor (IGBT) devices has always been an important indicator to determine the turn- off performance of the dc circuit breakers (DCCBs). The two main failure types for IGBT devices in DCCB applications are dynamic latch-...

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Bibliographic Details
Published in:IEEE transactions on industrial electronics (1982) 2024-03, Vol.71 (3), p.2177-2187
Main Authors: Wang, Jingfei, Liang, Guishu, Zhang, Xiangyu, Qi, Lei
Format: Article
Language:English
Subjects:
Breakdown voltage
CAD
Circuit breakers
Computer aided design
Current measurement
Device robustness
Electric breakdown
Failure
high-voltage direct current circuit breaker (DCCB)
Instantaneous current
Insulated gate bipolar transistors
Latch-up
Logic gates
Multilevel
multilevel turn<sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">-off
Parameters
Semiconductor devices
Snubbers
Voltage control
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Summary:The instantaneous current turn- off capability of the insulated gate bipolar transistor (IGBT) devices has always been an important indicator to determine the turn- off performance of the dc circuit breakers (DCCBs). The two main failure types for IGBT devices in DCCB applications are dynamic latch-up and tail current thermal breakdown. However, the mainstream traditional turn- off methods cannot effectively solve all failure types in DCCB applications. Instead, suppression of one failure type tends to increase the risk of another failure type. This article proposes a refinement multilevel turn- off method that successfully decoupled the main failure types of IGBT devices during turn- off and realizes the control of two key parameters dV CE / dt and I tail0 independently. The influence mechanism of two key parameters is revealed through comprehensive analysis and calculation. The effectiveness of the multilevel turn- off method in suppressing two key parameters is verified by technology computer aided design (TCAD) simulation and experiment. Finally, the turn- off ability of a 4.5kV/1.2 kA IGBT is increased from 12 to 17.6 kA (10 p.u. to 14.7 p.u.), which can significantly increase the allowable working area of IGBTs, thereby significantly reducing the cost of dc circuit breakers.
ISSN:0278-0046
1557-9948
DOI:10.1109/TIE.2023.3270536