A Metal-Oxide Thin-Film Transistor Technology With Donor-Species Drive-In Pretreatment

Accompanying a reduction in process temperature from 400 °C to 300 °C, the channel current of an elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) is found to change from one insensitive to the size of the conductive source/drain (S/D) regions to one suppressed with decreasing size of the...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2023-10, Vol.70 (10), p.5140-5145
Main Authors: Shi, Runxiao, Wang, Yuqi, Xia, Zhihe, Wong, Man
Format: Article
Language:English
Subjects:
Electrodes
Elevated-metal metal-oxide (EMMO)
Heat treatment
hydrogen (H)
indium-gallium-zinc oxide (IGZO)
Logic gates
Metal oxides
Plasma temperature
Pretreatment
Resistors
Semiconductor devices
source/drain (S/D) formation
Temperature sensors
Thermal resistance
Thin film transistors
thin-film transistor (TFT)
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Summary:Accompanying a reduction in process temperature from 400 °C to 300 °C, the channel current of an elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) is found to change from one insensitive to the size of the conductive source/drain (S/D) regions to one suppressed with decreasing size of the regions. The different behavior is attributed to the distinct donor-species responsible for the formation of the thermally induced S/D regions at the two process temperatures. Such sensitivity, often undesirable, can be reduced by completing a donor drive-in thermal treatment before the patterning of the S/D electrodes. This alternative process flow with drive-in pretreatment allows the construction at 300 °C of an EMMO TFT with a significantly reduced footprint while still exhibiting a relatively low S/D resistance.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2023.3309277