Polycrystalline ZnSxSe1−x thin films deposited on ITO glass by MBE

MBE growth of ZnSxSe1−x thin films on ITO coated glass substrates were carried out using ZnS and Se sources with the substrate temperature ranging from 270°C to 330°C. The XRD σ/2σ spectra resulted from these films indicated that the as-grown polycrystalline ZnSxSe1−x thin films had a preferred orie...

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Bibliographic Details
Published in:Journal of Zhejiang University. A. Science 2003, Vol.4 (2), p.131-135
Main Authors: Shen, Da-ke, Sou, I. K., Han, Gao-rong, Du, Pi-yi, Que, Duan-lin
Format: Article
Language:English
Subjects:
Columnar structure
Glass substrates
Photomicrographs
Polycrystals
Preferred orientation
Substrates
Temperature dependence
Thin films
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Summary:MBE growth of ZnSxSe1−x thin films on ITO coated glass substrates were carried out using ZnS and Se sources with the substrate temperature ranging from 270°C to 330°C. The XRD σ/2σ spectra resulted from these films indicated that the as-grown polycrystalline ZnSxSe1−x thin films had a preferred orientation along the (111) planes. The evaluated crystal sizes as deduced from the FWHM of the XRD layer peaks showed strong growth temperature dependence, with the optimized temperature being about 290 °C. Both AFM and TEM measurements of these thin films also indicated a similar growth temperature dependence. High quality ZnSxSe1−x thin film grown at the optimized temperature had the smoothest surface with lowest RMS value of 1.2 nm and TEM cross-sectional micrograph showing a well defined columnar structure.
ISSN:1673-565X
1862-1775
DOI:10.1631/jzus.2003.0131