Scattering of e± by silicon atoms and transport coefficients in mixtures of inert gas with silicon vapor

This work reports on the differential and various angle integrated cross sections for the scattering of electrons and positrons by silicon atoms. Moreover, the Sherman function S ( θ ) and two other spin asymmetry parameters U ( θ ) and T ( θ ) have been calculated. Critical minima in the elastic di...

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Bibliographic Details
Published in:The European physical journal. D, Atomic, molecular, and optical physics Atomic, molecular, and optical physics, 2023-09, Vol.77 (9)
Main Authors: Das, Pretam K., Ragimkhanov, G. B., Khalikova, Z. R., Shorifuddoza, M., Ashir, M. Moniruddoza, Barman, Joydeb, Watabe, Hiroshi, Haque, A. K. Fazlul, Uddin, M. Alfaz
Format: Article
Language:English
Subjects:
Applications of Nonlinear Dynamics and Chaos Theory
Argon
Atomic
Distribution functions
Electric fields
Electron energy distribution
Electron transport
Mixtures
Molecular
Monte Carlo simulation
Optical and Plasma Physics
Physical Chemistry
Physics
Physics and Astronomy
Polarization (spin alignment)
Positrons
Quantum Information Technology
Quantum Physics
Rare gases
Regular Article – Atomic and Molecular Collisions
Scattering cross sections
Silicon
Spectroscopy/Spectrometry
Spintronics
Transport properties
Vapors
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Summary:This work reports on the differential and various angle integrated cross sections for the scattering of electrons and positrons by silicon atoms. Moreover, the Sherman function S ( θ ) and two other spin asymmetry parameters U ( θ ) and T ( θ ) have been calculated. Critical minima in the elastic differential cross sections and maximum spin polarization points were identified for this element. Dirac partial wave method with a complex optical model potential is used to carry out these investigations. Transport characteristics of electrons in silicon vapors and mixtures of inert gases (helium, argon) with silicon vapor were calculated using the Monte Carlo method. For electric field strengths ranging from 1 to 100 Td, drift velocity, average electron energy, diffusion and mobility coefficients, and electron energy distribution function are studied. We have shown that impurities of silicon vapor significantly affect electron transport in noble gases. Graphical Abstract
ISSN:1434-6060
1434-6079
DOI:10.1140/epjd/s10053-023-00746-x