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Ultraviolet–Visible Photodetector Driven by Local Electrostatic Field from Chargeable Electret
Metal oxide semiconductors have been developed for ultraviolet–visible photodetectors, but improving sensitivity has remained a challenge due to poor mobility and carrier losses. In this study, a high‐performance photodetector is achieved by implementing a chargeable electret to regulate carrier tra...
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Published in: | Advanced optical materials 2023-10, Vol.11 (19) |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Metal oxide semiconductors have been developed for ultraviolet–visible photodetectors, but improving sensitivity has remained a challenge due to poor mobility and carrier losses. In this study, a high‐performance photodetector is achieved by implementing a chargeable electret to regulate carrier transmission properties in the CuBi
2
O
4
(CBO) conductive channel. As expected, the positively charged device shows improved performance, with a broadband detection range covering 250–600 nm, maximum responsivity and detectivity of around 10.65 A W
−1
and 8.56 × 10
12
Jones, and a fast rise and decay time of 50 and 300 µs, respectively. Mechanism analyses suggest two roles of the electret layer: 1) positive charges in the electret layer attract electrons and leave a pure hole conductive channel with less carrier recombination and trapping; 2) holes in the conductive channel move in one direction with less carrier collision and scattering. This work has demonstrated an effective strategy for providing a durable and stable ultra‐high electrostatic field to improve the sensitivity of photodetectors. |
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ISSN: | 2195-1071 2195-1071 |
DOI: | 10.1002/adom.202300543 |