High-Performance Acoustic Wave Devices on LiTaO3/SiC Hetero-Substrates

We present high-performance shear horizontal surface acoustic wave (SH-SAW) and longitudinal leaky SAW (LL-SAW) devices using lithium tantalate (LiTaO3) thin films on silicon carbide (SiC) substrate. The 4-in LiTaO3-on-SiC (LTOSiC) hetero-substrate was prepared by an ion-slicing process. Instead of...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2023-10, Vol.71 (10), p.4182
Main Authors: Zhang, Liping, Zhang, Shibin, Wu, Jinbo, Zheng, Pengcheng, Zhou, Hongyan, Hulin Yao, Li, Zhongxu, Huang, Kai, Sun, Huarui, Ou, Xin
Format: Article
Language:English
Subjects:
Acoustics
Frequency ranges
Insertion loss
Lithium tantalates
Resonators
Silicon carbide
Silicon dioxide
Silicon substrates
Surface acoustic wave devices
Surface acoustic waves
Thin films
Transport properties
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Summary:We present high-performance shear horizontal surface acoustic wave (SH-SAW) and longitudinal leaky SAW (LL-SAW) devices using lithium tantalate (LiTaO3) thin films on silicon carbide (SiC) substrate. The 4-in LiTaO3-on-SiC (LTOSiC) hetero-substrate was prepared by an ion-slicing process. Instead of the Si-based piezo-on-insulator substrates, generally embedded with functional dielectric layers (e.g., SiO2), LTOSiC with a simple structure has achieved exciting results on device frequency, quality factor ([Formula Omitted]), temperature coefficient of frequency (TCF), and thermal transport properties. The demonstrated resonators show the scalable resonances of 1.19–4.91 GHz, in which the gigahertz SH-SAW resonator exhibits an ultrahigh Bode-[Formula Omitted] of 8100 and an excellent TCF of −4.3 ppm/K, while the LL-SAW resonator presents a high Bode-[Formula Omitted] of 1000 and an improved TCF of −25.4 ppm/K at 5.0 GHz. Besides, the demonstrated filters show the center frequencies ([Formula Omitted]) of 2.74–4.26 GHz, the insertion loss (IL) below 1.26 dB, and an out-of-band (OoB) rejection of 10–45 dB. The SH-SAW-based filter shows a [Formula Omitted] of 3.36 GHz, an IL of 0.78 dB, and a 3-dB bandwidth of 180 MHz, while the LL-SAW-based filter shows a [Formula Omitted] of 3.85 GHz and an IL of 0.85 dB. Overall, LTOSiC may serve as an advanced material platform of acoustic devices for 5G-frequency range 1 (5G-FR1) bands.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2023.3267556