Laser Diodes (850 nm) Based on an Asymmetric AlGaAs/GaAs Heterostructure with a Bulk Active Region for Generating High-Power Subnanosecond Optical Pulses

• Published in: Bulletin of the Lebedev Physics Institute 2023-10, Vol.50 (Suppl 5), p.S513-S519
• Main Authors: Podoskin, A. A., Shushkanov, I. V., Shamakhov, V. V., Rizaev, A. E., Kondratov, M. I., Klimov, A. A., Zazulin, S. V., Slipchenko, S. O., Pikhtin, N. A.
• Format: Article
• Language: English
• Subjects: Aluminum gallium arsenides; Asymmetry; Design optimization; Diodes; Heterostructures; Lasers; Optical pulses; Physics; Physics and Astronomy; Pulse duration; Semiconductor lasers; Switching
• ISSN: 1068-3356; 1934-838X
• DOI: 10.3103/S1068335623170104

Laser diodes based on an asymmetric heterostructure AlGaAs/GaAs with a bulk active region, optimized for generating high-power subnanosecond optical pulses in the gain-switching mode, have been developed and investigated. The optimization of the asymmetric heterostructure design made it possible to obtain the parameter d / G = 4.2 µm (at the thickness d = 45 nm of the GaAs bulk active region and the optical confinement factor G = 1.08%). The developed laser diodes with a wide emitting aperture (100 µm) in the gain-switching mode demonstrated a peak output optical power of 22 W at a single pulse width at half maximum of less than 110 ps.