Demonstration of near-ideal Schottky contacts to Si-doped AlN

Near-ideal behavior in Schottky contacts to Si-doped AlN was observed as evidenced by a low ideality factor of 1.5 at room temperature. A temperature-independent Schottky barrier height of 1.9 eV was extracted from temperature-dependent I–V measurements. An activation energy of ∼300 meV was observed...

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Bibliographic Details
Published in:Applied physics letters 2023-10, Vol.123 (17)
Main Authors: Quiñones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., Rathkanthiwar, S., Tweedie, J., Pavlidis, S., Kohn, E., Collazo, R., Sitar, Z.
Format: Article
Language:English
Subjects:
Applied physics
Extreme environments
High temperature
Room temperature
Silicon
Temperature dependence
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Summary:Near-ideal behavior in Schottky contacts to Si-doped AlN was observed as evidenced by a low ideality factor of 1.5 at room temperature. A temperature-independent Schottky barrier height of 1.9 eV was extracted from temperature-dependent I–V measurements. An activation energy of ∼300 meV was observed in the series resistance, which corresponded to the ionization energy of the deep Si donor state. Both Ohmic and Schottky contacts were stable up to 650 °C, with around four orders of magnitude rectification at this elevated temperature. These results demonstrate the potential of AlN as a platform for power devices capable of operating in extreme environments.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0174524